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Title: Preparation of scanning tunneling microscopy tips using pulsed alternating current etching

Abstract

An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)

Authors:
; ; ; ; ; ;  [1]
  1. Department of Chemistry and Biochemistry, Loyola University Chicago, 1068 W. Sheridan Rd., Chicago, Illinois 60660 (United States)
Publication Date:
OSTI Identifier:
22392166
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ALTERNATING CURRENT; CONTROL; ELECTROCHEMISTRY; ETCHING; IMAGES; OPTIMIZATION; PULSES; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY

Citation Formats

Valencia, Victor A., Thaker, Avesh A., Derouin, Jonathan, Valencia, Damian N., Farber, Rachael G., Gebel, Dana A., and Killelea, Daniel R., E-mail: dkillelea@luc.edu. Preparation of scanning tunneling microscopy tips using pulsed alternating current etching. United States: N. p., 2015. Web. doi:10.1116/1.4904347.
Valencia, Victor A., Thaker, Avesh A., Derouin, Jonathan, Valencia, Damian N., Farber, Rachael G., Gebel, Dana A., & Killelea, Daniel R., E-mail: dkillelea@luc.edu. Preparation of scanning tunneling microscopy tips using pulsed alternating current etching. United States. doi:10.1116/1.4904347.
Valencia, Victor A., Thaker, Avesh A., Derouin, Jonathan, Valencia, Damian N., Farber, Rachael G., Gebel, Dana A., and Killelea, Daniel R., E-mail: dkillelea@luc.edu. Sun . "Preparation of scanning tunneling microscopy tips using pulsed alternating current etching". United States. doi:10.1116/1.4904347.
@article{osti_22392166,
title = {Preparation of scanning tunneling microscopy tips using pulsed alternating current etching},
author = {Valencia, Victor A. and Thaker, Avesh A. and Derouin, Jonathan and Valencia, Damian N. and Farber, Rachael G. and Gebel, Dana A. and Killelea, Daniel R., E-mail: dkillelea@luc.edu},
abstractNote = {An electrochemical method using pulsed alternating current etching (PACE) to produce atomically sharp scanning tunneling microscopy (STM) tips is presented. An Arduino Uno microcontroller was used to control the number and duration of the alternating current (AC) pulses, allowing for ready optimization of the procedures for both Pt:Ir and W tips using a single apparatus. W tips prepared using constant and pulsed AC power were compared. Tips fashioned using PACE were sharper than those etched with continuous AC power alone. Pt:Ir tips were prepared with an initial coarse etching stage using continuous AC power followed by fine etching using PACE. The number and potential of the finishing AC pulses was varied and scanning electron microscope imaging was used to compare the results. Finally, tip quality using the optimized procedures was verified by UHV-STM imaging. With PACE, at least 70% of the W tips and 80% of the Pt:Ir tips were of sufficiently high quality to obtain atomically resolved images of HOPG or Ni(111)},
doi = {10.1116/1.4904347},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 2,
volume = 33,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}
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