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Title: Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance

Abstract

Defects in crystalline InGaZnO{sub 4} (IGZO) induced by plasma were investigated using electron spin resonance (ESR). Thermal stabilities and g factors of two ESR signals (A and B observed at g = 1.939 and 2.003, respectively) in IGZO were different from those of the ESR signals observed in component materials such as Ga{sub 2}O{sub 3} (signal observed at g = 1.969), In{sub 2}O{sub 3} (no signal), and ZnO (signal observed at g = 1.957). Signal A in IGZO increased upon annealing at 300 °C for 1 h, but decreased when annealing was continued for more than 2 h. On the other hand, signal B decreased upon annealing at 300 °C for 1 h. The ESR signal in ZnO decayed in accordance with a second-order decay model with a rate constant of 2.1 × 10{sup −4} s{sup −1}; however, this phenomenon was not observed in other materials. This difference might have been due to randomly formed IGZO lattices such as asymmetrical (Ga, Zn)O and In-O layers. Defects in signals A and B in IGZO were formed in trap states (at the deep level) and tail states, respectively.

Authors:
;  [1]
  1. Department of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, 1-438, 1-5 Yokotani, Seta Oe-Cho, Otsu, Shiga 520-2194, Japan and Joint Research Center for Science and Technology, Ryukoku University, 1-5 Yokotani, Seta Oe-Cho, Otsu, Shiga 520-2194 (Japan)
Publication Date:
OSTI Identifier:
22392126
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ANNEALING; COMPARATIVE EVALUATIONS; DEFECTS; ELECTRON SPIN RESONANCE; GALLIUM OXIDES; INDIUM OXIDES; LANDE FACTOR; PLASMA; SEMICONDUCTOR MATERIALS; SIGNALS; ZINC OXIDES

Citation Formats

Matsuda, Tokiyoshi, E-mail: toki@rins.ryukoku.ac.jp, and Kimura, Mutsumi. Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance. United States: N. p., 2015. Web. doi:10.1116/1.4904400.
Matsuda, Tokiyoshi, E-mail: toki@rins.ryukoku.ac.jp, & Kimura, Mutsumi. Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance. United States. doi:10.1116/1.4904400.
Matsuda, Tokiyoshi, E-mail: toki@rins.ryukoku.ac.jp, and Kimura, Mutsumi. Sun . "Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance". United States. doi:10.1116/1.4904400.
@article{osti_22392126,
title = {Comparison of defects in crystalline oxide semiconductor materials by electron spin resonance},
author = {Matsuda, Tokiyoshi, E-mail: toki@rins.ryukoku.ac.jp and Kimura, Mutsumi},
abstractNote = {Defects in crystalline InGaZnO{sub 4} (IGZO) induced by plasma were investigated using electron spin resonance (ESR). Thermal stabilities and g factors of two ESR signals (A and B observed at g = 1.939 and 2.003, respectively) in IGZO were different from those of the ESR signals observed in component materials such as Ga{sub 2}O{sub 3} (signal observed at g = 1.969), In{sub 2}O{sub 3} (no signal), and ZnO (signal observed at g = 1.957). Signal A in IGZO increased upon annealing at 300 °C for 1 h, but decreased when annealing was continued for more than 2 h. On the other hand, signal B decreased upon annealing at 300 °C for 1 h. The ESR signal in ZnO decayed in accordance with a second-order decay model with a rate constant of 2.1 × 10{sup −4} s{sup −1}; however, this phenomenon was not observed in other materials. This difference might have been due to randomly formed IGZO lattices such as asymmetrical (Ga, Zn)O and In-O layers. Defects in signals A and B in IGZO were formed in trap states (at the deep level) and tail states, respectively.},
doi = {10.1116/1.4904400},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 2,
volume = 33,
place = {United States},
year = {Sun Mar 15 00:00:00 EDT 2015},
month = {Sun Mar 15 00:00:00 EDT 2015}
}