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Title: Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se{sub 2} solar cells

Abstract

Thin films of Zn(O,S) were deposited by atomic layer deposition from diethylzinc, water (H{sub 2}O), and hydrogen sulfide (H{sub 2}S). First, a study on the influence of the H{sub 2}S/(H{sub 2}O+H{sub 2}S) pulse ratio from pure ZnO to pure ZnS was performed at deposition temperature T{sub dep}=120 and 200 °C. Zn(O,S) films had higher S content than expected, and this effect was stronger at T{sub dep}=200 °C. Then, Zn(O,S) films have been synthesized over the range of temperature 120–220 °C at the constant H{sub 2}S/(H{sub 2}O+H{sub 2}S) pulse ratio of 9%. For T{sub dep}<180 °C, high and almost constant S content has been measured in the films. The significant increase of the S/(O+S) atomic ratio for T{sub dep}>180 °C confirmed that exchange reactions occurred between the Zn(O,S) growing films and H{sub 2}S. The grazing incidence x-ray diffraction patterns showed Zn(O,S) films with hexagonal wurtzite structures and with an optimum crystallization for temperatures T{sub dep}=160–180 °C. Indeed, in this temperature range, well crystallized and large grains were obtained which was in good correlation with the film morphology determined by scanning electron microscope; and Hall effect measurements revealed low resistivities, high carrier concentrations (>10{sup 19} cm{sup −3}), and low mobilities. From these results, the authors propose the existence of a temperaturemore » range where the properties undergo significant changes while the atomic composition remains constant.« less

Authors:
; ; ; ;  [1]
  1. Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 – EDF – CNRS – Chimie Paristech, 6 quai Watier, 78401 Chatou (France)
Publication Date:
OSTI Identifier:
22392123
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; CRYSTALLIZATION; DEPOSITION; HALL EFFECT; HYDROGEN SULFIDES; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; WATER; X-RAY DIFFRACTION; ZINC; ZINC OXIDES; ZINC SULFIDES

Citation Formats

Bugot, Cathy, E-mail: cathy-externe.bugot@edf.fr, Schneider, Nathanaëlle, Jubault, Marie, Lincot, Daniel, and Donsanti, Frédérique, E-mail: frederique.donsanti@edf.fr. Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se{sub 2} solar cells. United States: N. p., 2015. Web. doi:10.1116/1.4903366.
Bugot, Cathy, E-mail: cathy-externe.bugot@edf.fr, Schneider, Nathanaëlle, Jubault, Marie, Lincot, Daniel, & Donsanti, Frédérique, E-mail: frederique.donsanti@edf.fr. Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se{sub 2} solar cells. United States. doi:10.1116/1.4903366.
Bugot, Cathy, E-mail: cathy-externe.bugot@edf.fr, Schneider, Nathanaëlle, Jubault, Marie, Lincot, Daniel, and Donsanti, Frédérique, E-mail: frederique.donsanti@edf.fr. Thu . "Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se{sub 2} solar cells". United States. doi:10.1116/1.4903366.
@article{osti_22392123,
title = {Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se{sub 2} solar cells},
author = {Bugot, Cathy, E-mail: cathy-externe.bugot@edf.fr and Schneider, Nathanaëlle and Jubault, Marie and Lincot, Daniel and Donsanti, Frédérique, E-mail: frederique.donsanti@edf.fr},
abstractNote = {Thin films of Zn(O,S) were deposited by atomic layer deposition from diethylzinc, water (H{sub 2}O), and hydrogen sulfide (H{sub 2}S). First, a study on the influence of the H{sub 2}S/(H{sub 2}O+H{sub 2}S) pulse ratio from pure ZnO to pure ZnS was performed at deposition temperature T{sub dep}=120 and 200 °C. Zn(O,S) films had higher S content than expected, and this effect was stronger at T{sub dep}=200 °C. Then, Zn(O,S) films have been synthesized over the range of temperature 120–220 °C at the constant H{sub 2}S/(H{sub 2}O+H{sub 2}S) pulse ratio of 9%. For T{sub dep}<180 °C, high and almost constant S content has been measured in the films. The significant increase of the S/(O+S) atomic ratio for T{sub dep}>180 °C confirmed that exchange reactions occurred between the Zn(O,S) growing films and H{sub 2}S. The grazing incidence x-ray diffraction patterns showed Zn(O,S) films with hexagonal wurtzite structures and with an optimum crystallization for temperatures T{sub dep}=160–180 °C. Indeed, in this temperature range, well crystallized and large grains were obtained which was in good correlation with the film morphology determined by scanning electron microscope; and Hall effect measurements revealed low resistivities, high carrier concentrations (>10{sup 19} cm{sup −3}), and low mobilities. From these results, the authors propose the existence of a temperature range where the properties undergo significant changes while the atomic composition remains constant.},
doi = {10.1116/1.4903366},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 33,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}