skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells

Abstract

Atomic layer deposition (ALD) of TiS{sub 2} is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS{sub 2} is applied as a photon harvesting material for solid state sensitized solar cells with TiO{sub 2} as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination.

Authors:
 [1];  [2]
  1. Centre for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Powai 400076 (India)
  2. Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai 400076 (India)
Publication Date:
OSTI Identifier:
22392122
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALS; DEPOSITION; EFFICIENCY; ELECTRONS; ENERGY CONVERSION; HARVESTING; HYDROGEN SULFIDES; MICROBALANCES; QUARTZ; REFLECTIVITY; SOLAR ABSORBERS; SOLAR CELLS; TITANIUM CHLORIDES; TITANIUM OXIDES; TITANIUM SULFIDES; X RADIATION

Citation Formats

Mahuli, Neha, and Sarkar, Shaibal K., E-mail: shaibal.sarkar@iitb.ac.in. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells. United States: N. p., 2015. Web. doi:10.1116/1.4904497.
Mahuli, Neha, & Sarkar, Shaibal K., E-mail: shaibal.sarkar@iitb.ac.in. Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells. United States. doi:10.1116/1.4904497.
Mahuli, Neha, and Sarkar, Shaibal K., E-mail: shaibal.sarkar@iitb.ac.in. Thu . "Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells". United States. doi:10.1116/1.4904497.
@article{osti_22392122,
title = {Atomic layer deposition of titanium sulfide and its application in extremely thin absorber solar cells},
author = {Mahuli, Neha and Sarkar, Shaibal K., E-mail: shaibal.sarkar@iitb.ac.in},
abstractNote = {Atomic layer deposition (ALD) of TiS{sub 2} is investigated with titanium tetrachloride and hydrogen sulfide precursors. In-situ quartz crystal microbalance and ex-situ x-ray reflectivity measurements are carried out to study self-limiting deposition chemistry and material growth characteristics. The saturated growth rate is found to be ca. 0.5 Å/cycle within the ALD temperature window of 125–200 °C. As grown material is found poorly crystalline. ALD grown TiS{sub 2} is applied as a photon harvesting material for solid state sensitized solar cells with TiO{sub 2} as electron transport medium. Initial results with Spiro-OMeTAD as hole conducting layer show ca. 0.6% energy conversion efficiency under 1 sun illumination.},
doi = {10.1116/1.4904497},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 33,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}