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Title: Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties

Abstract

Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.

Authors:
; ; ;  [1]; ; ; ; ;  [2]
  1. Brandenburg University of Technology Cottbus-Senftenberg, Applied Physics and Sensors, K.-Wachsmann-Allee 17, D-03046 Cottbus (Germany)
  2. SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22392117
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CAPACITANCE; CRYSTAL GROWTH; DEPOSITS; DIELECTRIC MATERIALS; FILMS; LEAKAGE CURRENT; PHOTOCATALYSIS; PLASMA; TITANIUM IONS; TITANIUM OXIDES

Citation Formats

Das, Chittaranjan, E-mail: chittaiit@yahoo.com, Henkel, Karsten, Tallarida, Massimo, Schmeißer, Dieter, Gargouri, Hassan, Kärkkänen, Irina, Schneidewind, Jessica, Gruska, Bernd, and Arens, Michael. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties. United States: N. p., 2015. Web. doi:10.1116/1.4903938.
Das, Chittaranjan, E-mail: chittaiit@yahoo.com, Henkel, Karsten, Tallarida, Massimo, Schmeißer, Dieter, Gargouri, Hassan, Kärkkänen, Irina, Schneidewind, Jessica, Gruska, Bernd, & Arens, Michael. Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties. United States. doi:10.1116/1.4903938.
Das, Chittaranjan, E-mail: chittaiit@yahoo.com, Henkel, Karsten, Tallarida, Massimo, Schmeißer, Dieter, Gargouri, Hassan, Kärkkänen, Irina, Schneidewind, Jessica, Gruska, Bernd, and Arens, Michael. Thu . "Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties". United States. doi:10.1116/1.4903938.
@article{osti_22392117,
title = {Thermal and plasma enhanced atomic layer deposition of TiO{sub 2}: Comparison of spectroscopic and electric properties},
author = {Das, Chittaranjan, E-mail: chittaiit@yahoo.com and Henkel, Karsten and Tallarida, Massimo and Schmeißer, Dieter and Gargouri, Hassan and Kärkkänen, Irina and Schneidewind, Jessica and Gruska, Bernd and Arens, Michael},
abstractNote = {Titanium oxide (TiO{sub 2}) deposited by atomic layer deposition (ALD) is used as a protective layer in photocatalytic water splitting system as well as a dielectric in resistive memory switching. The way ALD is performed (thermally or plasma-assisted) may change the growth rate as well as the electronic properties of the deposited films. In the present work, the authors verify the influence of the ALD mode on functional parameters, by comparing the growth rate and electronic properties of TiO{sub 2} films deposited by thermal (T-) and plasma-enhanced (PE-) ALD. The authors complete the study with the electrical characterization of selected samples by means of capacitance–voltage and current–voltage measurements. In all samples, the authors found a significant presence of Ti{sup 3+} states, with the lowest content in the PE-ALD grown TiO{sub 2} films. The observation of Ti{sup 3+} states was accompanied by the presence of in-gap states above the valence band maximum. For films thinner than 10 nm, the authors found also a strong leakage current. Also in this case, the PE-ALD films showed the weakest leakage currents, showing a correlation between the presence of Ti{sup 3+} states and leakage current density.},
doi = {10.1116/1.4903938},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 33,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}