Undoped TiO{sub 2} and nitrogen-doped TiO{sub 2} thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications
- SIMaP Laboratory - CNRS, Univ. Grenoble Alpes, F-38000 Grenoble (France)
- LMGP Laboratory - CNRS, Univ. Grenoble Alpes, F-38000 Grenoble (France)
Undoped and nitrogen doped TiO{sub 2} thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 °C and nitrogen incorporation was achieved by using titanium isopropoxide, NH{sub 3} and/or N{sub 2}O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Ω cm (+/−10 Ω cm) combined with an average total transmittance of 60% in the 400–1000 nm wavelength range. Eventually, TiO{sub 2} thin films were deposited on the 3D metallic foam template.
- OSTI ID:
- 22392114
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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