Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

doi:10.1116/1.4901457

Title: Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films

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Abstract

Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.

Authors:

Mann, Harkirat S.; Lang, Brian N.; Schwab, Yosyp; Scarel, Giovanna, E-mail: scarelgx@jmu.edu ^[1]; Niemelä, Janne-Petteri; Karppinen, Maarit ^[2]

Department of Physics and Astronomy, James Madison University, 901 Carrier Drive, Harrisonburg, Virginia 22807 (United States)
Department of Chemistry, Aalto University, P.O. Box 16100, Aalto, 00076 Finland (Finland)

Publication Date:: Thu Jan 15 00:00:00 EST 2015

OSTI Identifier:: 22392097

Resource Type:: Journal Article

Resource Relation:: Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING; BOROSILICATE GLASS; DEPOSITION; DEPOSITS; DOPED MATERIALS; EFFICIENCY; ELECTRIC POTENTIAL; HEAT; INFRARED RADIATION; LAYERS; NANOSTRUCTURES; RADIANT HEAT TRANSFER; SEEBECK EFFECT; THIN FILMS; TITANIUM OXIDES

Citation Formats


                    Mann, Harkirat S., Lang, Brian N., Schwab, Yosyp, Scarel, Giovanna, E-mail: scarelgx@jmu.edu, Niemelä, Janne-Petteri, and Karppinen, Maarit. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films.  United States: N. p., 2015. 
        Web.  doi:10.1116/1.4901457.

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                    Mann, Harkirat S., Lang, Brian N., Schwab, Yosyp, Scarel, Giovanna, E-mail: scarelgx@jmu.edu, Niemelä, Janne-Petteri, & Karppinen, Maarit. Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films.  United States.  doi:10.1116/1.4901457.

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                    Mann, Harkirat S., Lang, Brian N., Schwab, Yosyp, Scarel, Giovanna, E-mail: scarelgx@jmu.edu, Niemelä, Janne-Petteri, and Karppinen, Maarit. Thu .  
        "Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films".  United States.  
        doi:10.1116/1.4901457.

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@article{osti_22392097,

  title        = {Infrared and thermoelectric power generation in thin atomic layer deposited Nb-doped TiO{sub 2} films},

  author       = {Mann, Harkirat S. and Lang, Brian N. and Schwab, Yosyp and Scarel, Giovanna, E-mail: scarelgx@jmu.edu and Niemelä, Janne-Petteri and Karppinen, Maarit},

  abstractNote = {Infrared radiation is used to radiatively transfer heat to a nanometric power generator (NPG) device with a thermoelectric Nb-doped TiO{sub 2} film deposited by atomic layer deposition (ALD) as the active element, onto a borosilicate glass substrate. The linear rise of the produced voltage with respect to the temperature difference between the “hot” and “cold” junctions, typical of the Seebeck effect, is missing. The discovery of the violation of the Seebeck effect in NPG devices combined with the ability of ALD to tune thermoelectric thin film properties could be exploited to increase the efficiency of these devices for energy harvesting purposes.},

  doi          = {10.1116/1.4901457},

  journal      = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},

  number       = 1,

  volume       = 33,

  place        = {United States},

  year         = {Thu Jan 15 00:00:00 EST 2015},

  month        = {Thu Jan 15 00:00:00 EST 2015}

}

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DOI: 10.1116/1.4901457

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Undoped TiO{sub 2} and nitrogen-doped TiO{sub 2} thin films deposited by atomic layer deposition on planar and architectured surfaces for photovoltaic applications

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Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore »« less
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