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Title: Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis

Abstract

Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al{sub 2}O{sub 3} and TiO{sub 2} processes from Me{sub 3}Al/H{sub 2}O and TiCl{sub 4}/H{sub 2}O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.

Authors:
; ;  [1]
  1. VTT Technical Research Centre of Finland, Tietotie 3, 02044 Espoo (Finland)
Publication Date:
OSTI Identifier:
22392087
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM OXIDES; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; DEPOSITS; SILICON; SIMULATION; THIN FILMS; TITANIUM CHLORIDES; TITANIUM OXIDES

Citation Formats

Gao, Feng, Arpiainen, Sanna, and Puurunen, Riikka L., E-mail: riikka.puurunen@vtt.fi. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis. United States: N. p., 2015. Web. doi:10.1116/1.4903941.
Gao, Feng, Arpiainen, Sanna, & Puurunen, Riikka L., E-mail: riikka.puurunen@vtt.fi. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis. United States. doi:10.1116/1.4903941.
Gao, Feng, Arpiainen, Sanna, and Puurunen, Riikka L., E-mail: riikka.puurunen@vtt.fi. Thu . "Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis". United States. doi:10.1116/1.4903941.
@article{osti_22392087,
title = {Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis},
author = {Gao, Feng and Arpiainen, Sanna and Puurunen, Riikka L., E-mail: riikka.puurunen@vtt.fi},
abstractNote = {Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) processes. This work presents new silicon-based microscopic lateral high-aspect-ratio (LHAR) test structures for the analysis of the conformality of thin films deposited by ALD and by other chemical vapor deposition means. The microscopic LHAR structures consist of a lateral cavity inside silicon with a roof supported by pillars. The cavity length (e.g., 20–5000 μm) and cavity height (e.g., 200–1000 nm) can be varied, giving aspect ratios of, e.g., 20:1 to 25 000:1. Film conformality can be analyzed with the microscopic LHAR by several means, as demonstrated for the ALD Al{sub 2}O{sub 3} and TiO{sub 2} processes from Me{sub 3}Al/H{sub 2}O and TiCl{sub 4}/H{sub 2}O. The microscopic LHAR test structures introduced in this work expose a new parameter space for thin film conformality investigations expected to prove useful in the development, tuning and modeling of ALD and other chemical vapor deposition processes.},
doi = {10.1116/1.4903941},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 33,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}