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Title: Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

Abstract

Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

Authors:
; ;
Publication Date:
OSTI Identifier:
22392063
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; ELECTRONIC STRUCTURE; GRAPHENE; HEXAGONAL SYSTEMS; SPIN; SPIN ORIENTATION; TUNNEL EFFECT; VAN DER WAALS FORCES

Citation Formats

Kamalakar, M. Venkata, E-mail: venkata.mutta@chalmers.se, Dankert, André, Bergsten, Johan, Ive, Tommy, and Dash, Saroj P., E-mail: saroj.dash@chalmers.se. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures. United States: N. p., 2014. Web. doi:10.1063/1.4902814.
Kamalakar, M. Venkata, E-mail: venkata.mutta@chalmers.se, Dankert, André, Bergsten, Johan, Ive, Tommy, & Dash, Saroj P., E-mail: saroj.dash@chalmers.se. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures. United States. doi:10.1063/1.4902814.
Kamalakar, M. Venkata, E-mail: venkata.mutta@chalmers.se, Dankert, André, Bergsten, Johan, Ive, Tommy, and Dash, Saroj P., E-mail: saroj.dash@chalmers.se. Mon . "Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures". United States. doi:10.1063/1.4902814.
@article{osti_22392063,
title = {Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures},
author = {Kamalakar, M. Venkata, E-mail: venkata.mutta@chalmers.se and Dankert, André and Bergsten, Johan and Ive, Tommy and Dash, Saroj P., E-mail: saroj.dash@chalmers.se},
abstractNote = {Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.},
doi = {10.1063/1.4902814},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 105,
place = {United States},
year = {2014},
month = {11}
}