Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

Journal Article · Mon Nov 24 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902088· OSTI ID:22392060

Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Patel, S. J. ^[1]; Palmstrøm, C. J. ^[1]

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1. Department of Materials, University of California, Santa Barbara, California 93106 (United States)

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

• OSTI ID: 22392060
• Journal Information: Applied Physics Letters, Vol. 105, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COBALT COMPOUNDS
DOPED MATERIALS
EPITAXY
FERROMAGNETIC RESONANCE
FERROMAGNETISM
GALLIUM ARSENIDES
IRON COMPOUNDS
MAGNETIZATION
MAGNETORESISTANCE
MANGANESE COMPOUNDS
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
SPIN
SPIN ORIENTATION
TUNNEL EFFECT