skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Abstract

Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles. A blue-shift of the near band-edge photoluminescence after post-deposition annealing at 300 °C indicates significant activation of the Mg dopant. A 7:1 ratio of ZnO:MgO deposition cycles was used to fabricate a device with a TFT channel width of 2000 μm and a channel length of 60 μm. This transistor yielded an effective saturation mobility of 4 cm{sup 2}/V s and a threshold voltage of 7.1 V, respectively. The on/off ratio was 1.6×10{sup 6} and the maximum interface state density at the ZnO/SiO{sub 2} interface is ∼6.5×10{sup 12} cm{sup −2}.

Authors:
; ;  [1]; ; ; ;  [2]
  1. Centre for Materials and Structures, School of Engineering, University of Liverpool, Ashton Street, Liverpool L69 3GH (United Kingdom)
  2. Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ (United Kingdom)
Publication Date:
OSTI Identifier:
22392012
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DEPOSITION; LAYERS; MAGNESIUM; MAGNESIUM OXIDES; PHOTOLUMINESCENCE; SILICA; SILICON OXIDES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TRANSISTORS; ZINC OXIDES

Citation Formats

Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., and Hall, S. Compositional tuning of atomic layer deposited MgZnO for thin film transistors. United States: N. p., 2014. Web. doi:10.1063/1.4902389.
Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., & Hall, S. Compositional tuning of atomic layer deposited MgZnO for thin film transistors. United States. https://doi.org/10.1063/1.4902389
Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., and Hall, S. Mon . "Compositional tuning of atomic layer deposited MgZnO for thin film transistors". United States. https://doi.org/10.1063/1.4902389.
@article{osti_22392012,
title = {Compositional tuning of atomic layer deposited MgZnO for thin film transistors},
author = {Wrench, J. S. and Brunell, I. F. and Chalker, P. R. and Jin, J. D. and Shaw, A. and Mitrovic, I. Z. and Hall, S.},
abstractNote = {Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles. A blue-shift of the near band-edge photoluminescence after post-deposition annealing at 300 °C indicates significant activation of the Mg dopant. A 7:1 ratio of ZnO:MgO deposition cycles was used to fabricate a device with a TFT channel width of 2000 μm and a channel length of 60 μm. This transistor yielded an effective saturation mobility of 4 cm{sup 2}/V s and a threshold voltage of 7.1 V, respectively. The on/off ratio was 1.6×10{sup 6} and the maximum interface state density at the ZnO/SiO{sub 2} interface is ∼6.5×10{sup 12} cm{sup −2}.},
doi = {10.1063/1.4902389},
url = {https://www.osti.gov/biblio/22392012}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 105,
place = {United States},
year = {2014},
month = {11}
}