Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4902022· OSTI ID:22391979

Höglund, L.; Ting, D. Z.; Soibel, A.; Fisher, A.; Khoshakhlagh, A.; Hill, C. J.; Keo, S.; Gunapala, S. D. ^[1]

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1. Jet Propulsion Laboratory, Center for Infrared Photodetectors, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109-8099 (United States)

The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's dependence on temperature, photon recycling, and carrier concentration, it was demonstrated that radiative lifetime dominates for carrier concentrations >5 × 10{sup 14} cm{sup −3}, and Shockley-Read-Hall recombination starts to dominate the minority carrier lifetime for carrier concentrations <5 × 10{sup 14} cm{sup −3}. An observed increase of the minority carrier lifetime with increasing superlattice thickness was attributed to photon recycling, and good agreement between measured and theoretical values of the photon recycling factor was obtained.

• OSTI ID: 22391979
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANTIMONY COMPOUNDS
CARRIER LIFETIME
INDIUM ARSENIDES
PHOTONS
RECOMBINATION
RECYCLING
SUPERLATTICES