Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901529· OSTI ID:22391926

Qiu, Weicheng ^[1]; Hu, Weida; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei ^[2]; Cheng, Xiang'ai; Wang, Rui ^[1]

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1. College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

• OSTI ID: 22391926
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BORON IONS
CADMIUM TELLURIDES
CDTE SEMICONDUCTOR DETECTORS
CRYSTAL DEFECTS
DOPED MATERIALS
INFRARED SPECTRA
ION IMPLANTATION
LASERS
MERCURY COMPOUNDS
MICROSCOPES
PHOTOVOLTAIC EFFECT
P-N JUNCTIONS
TEMPERATURE DEPENDENCE