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Title: Dielectric behavior of a-Sn-Se-Pb-Ge chalcogenide glass

Abstract

The bulk material Sn{sub 8}Se{sub 74}Pb{sub 18-x}Ge{sub x}(7≤x≤11) has been prepared by melt quenching technique. The viterous and glassy nature have been confirmed by X-Ray Diffraction (XRD) and Differential Scanning Calorimetery (DSC) techniques respectively. The material exhibits the good thermal stability and high value of glass transition temperature. The dielectric behavior has been studied in frequency range 50Hz-1MHz, using pallet method. The universal dielectric behaviour of amorphous semiconductors has been observed for the glass system. The compositional dependence of dielectric behavior has also been observed.

Authors:
; ; ; ;  [1]
  1. Department of Physics, Himachal Pradesh University, Summerhill Shimla 171005 (India)
Publication Date:
OSTI Identifier:
22391748
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CALORIMETRY; CONCENTRATION RATIO; DIELECTRIC MATERIALS; DIFFERENTIAL THERMAL ANALYSIS; FREQUENCY DEPENDENCE; GERMANIDES; GLASS; LEAD COMPOUNDS; PHASE STABILITY; QUENCHING; SEMICONDUCTOR MATERIALS; TIN SELENIDES; TRANSITION TEMPERATURE; X-RAY DIFFRACTION

Citation Formats

Kumar, Prashant, E-mail: prashantshrm5@gmail.com, Modgil, Vivek, Choudhary, Shobhana, Nidhi, A. V., and Rangra, V. S. Dielectric behavior of a-Sn-Se-Pb-Ge chalcogenide glass. United States: N. p., 2015. Web. doi:10.1063/1.4915430.
Kumar, Prashant, E-mail: prashantshrm5@gmail.com, Modgil, Vivek, Choudhary, Shobhana, Nidhi, A. V., & Rangra, V. S. Dielectric behavior of a-Sn-Se-Pb-Ge chalcogenide glass. United States. doi:10.1063/1.4915430.
Kumar, Prashant, E-mail: prashantshrm5@gmail.com, Modgil, Vivek, Choudhary, Shobhana, Nidhi, A. V., and Rangra, V. S. Fri . "Dielectric behavior of a-Sn-Se-Pb-Ge chalcogenide glass". United States. doi:10.1063/1.4915430.
@article{osti_22391748,
title = {Dielectric behavior of a-Sn-Se-Pb-Ge chalcogenide glass},
author = {Kumar, Prashant, E-mail: prashantshrm5@gmail.com and Modgil, Vivek and Choudhary, Shobhana and Nidhi, A. V. and Rangra, V. S.},
abstractNote = {The bulk material Sn{sub 8}Se{sub 74}Pb{sub 18-x}Ge{sub x}(7≤x≤11) has been prepared by melt quenching technique. The viterous and glassy nature have been confirmed by X-Ray Diffraction (XRD) and Differential Scanning Calorimetery (DSC) techniques respectively. The material exhibits the good thermal stability and high value of glass transition temperature. The dielectric behavior has been studied in frequency range 50Hz-1MHz, using pallet method. The universal dielectric behaviour of amorphous semiconductors has been observed for the glass system. The compositional dependence of dielectric behavior has also been observed.},
doi = {10.1063/1.4915430},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1661,
place = {United States},
year = {2015},
month = {5}
}