Effect of thermal annealing on structure and optical band gap of Se{sub 66}Te{sub 25}In{sub 9} thin films

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915428· OSTI ID:22391746

Dwivedi, D. K.; Pathak, H. P.; Shukla, Nitesh ^[1]; Kumar, Vipin ^[2]

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1. Amorphous Semiconductor Research Lab Department of Physics, M.M.M. University of Technology, Gorakhpur-273010 (India)
2. Department of Physics, K.I.E.T., Ghaziabad (India)

Thin films of a-Se{sub 66}Te{sub 25}In{sub 9} have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. Glassy nature of the films has been ascertained by X-ray diffraction pattern. The analysis of absorption spectra, measured at normal incidence, in the spectral range 400-1100 nm has been used for the optical characterization of thin films under investigation. The effect of thermal annealing on structure and optical band gap (E{sub g}) of a-Se{sub 66}Te{sub 25}In{sub 9} have been studied.

• OSTI ID: 22391746
• Journal Information: AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTRA
ANNEALING
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
ENERGY GAP
EVAPORATION
GLASS
INDIUM TELLURIDES
SELENIDES
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION