skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tailoring of absorption edge by thermal annealing in tin oxide thin films

Abstract

Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.

Authors:
 [1];  [2];  [3];  [4]; ;  [5]
  1. Advanced Materials Research Lab, Department of Basic and Applied Sciences, Punjabi University, Patiala-147002 Punjab (India)
  2. SSB UICET, Panjab University, Chandigarh-160014 (India)
  3. Department of Physics, Punjabi University, Patiala-147002, Punjab (India)
  4. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, S. Korea (Korea, Republic of)
  5. Pohang Accelerator Lab., San31, Hyojadong, Namgu, Pohang – 790 784, S. Korea (Korea, Republic of)
Publication Date:
OSTI Identifier:
22391740
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABSORPTION; ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; GAS FLOW; GLASS; OPACITY; OXYGEN; RADIOWAVE RADIATION; SILICON; SPUTTERING; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION

Citation Formats

Thakur, Anup, E-mail: dranupthakur@gmail.com, Gautam, Sanjeev, Kumar, Virender, Chae, K. H., Lee, Ik-Jae, and Shin, Hyun Joon. Tailoring of absorption edge by thermal annealing in tin oxide thin films. United States: N. p., 2015. Web. doi:10.1063/1.4915421.
Thakur, Anup, E-mail: dranupthakur@gmail.com, Gautam, Sanjeev, Kumar, Virender, Chae, K. H., Lee, Ik-Jae, & Shin, Hyun Joon. Tailoring of absorption edge by thermal annealing in tin oxide thin films. United States. doi:10.1063/1.4915421.
Thakur, Anup, E-mail: dranupthakur@gmail.com, Gautam, Sanjeev, Kumar, Virender, Chae, K. H., Lee, Ik-Jae, and Shin, Hyun Joon. Fri . "Tailoring of absorption edge by thermal annealing in tin oxide thin films". United States. doi:10.1063/1.4915421.
@article{osti_22391740,
title = {Tailoring of absorption edge by thermal annealing in tin oxide thin films},
author = {Thakur, Anup, E-mail: dranupthakur@gmail.com and Gautam, Sanjeev and Kumar, Virender and Chae, K. H. and Lee, Ik-Jae and Shin, Hyun Joon},
abstractNote = {Tin oxide (SnO{sub 2}) thin films were deposited by radio-frequency (RF) magnetron sputtering on silicon and glass substrates in different oxygen-to-argon gas-flow ratio (O{sub 2}-to-Ar = 0%, 10%, 50%). All films were deposited at room temperature and fixed working pressures, 10 mTorr. The X-ray diffraction (XRD) measurement suggests that all films were crystalline in nature except film deposited in argon environment. Thin films were annealed in air at 200 °C, 400 °C and 600 °C for two hours. All films were highly transparent except the film deposited only in the argon environment. It was also observed that transparency was improved with annealing due to decrease in oxygen vacancies. Atomic force microscopy (AFM), results showed that the surface of all the films were highly flat and smooth. Blue shift was observed in the absorption edge with annealing temperature. It was also observed that there was not big change in the absorption edge with annealing for films deposited in 10% and 50% oxygen-to-argon gas-flow ratio.},
doi = {10.1063/1.4915421},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1661,
place = {United States},
year = {2015},
month = {5}
}