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Title: Electronic and dielectric properties of MoS{sub 2}-MoX{sub 2} heterostructures

Abstract

We present a comparative study of electronic and dielectric properties of MoS{sub 2}−MoX{sub 2} heteostructures (where X=S, Se, Te) within the framework of density functional theory (DFT). Electronic band structure, real and imaginary part of dielectric function, electron energy loss spectra and static dielectric constant have been calculated for each system and compared with one another. A systematic decrease/increase in band gap/static dielectric constant is observed as the X changes from S to Te. These results provide a physical basis for the potential applications of these heterostructures in optoelectronic devices.

Authors:
; ;  [1];  [2]
  1. Department. of Physics, Himachal Pradesh University, Shimla, H. P., 171005 (India)
  2. Department. of Physics, Panjab University, Chandigarh, 160014 (India)
Publication Date:
OSTI Identifier:
22391738
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; COMPARATIVE EVALUATIONS; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; ENERGY-LOSS SPECTROSCOPY; HETEROJUNCTIONS; MOLYBDENUM SULFIDES; MOLYBDENUM TELLURIDES; OPTOELECTRONIC DEVICES; PERMITTIVITY

Citation Formats

Sharma, Munish, E-mail: munishsharmahpu@live.com, Jamdagni, Pooja, Ahluwalia, P. K, E-mail: pk-ahluwalia7@yahoo.com, and Kumar, Ashok. Electronic and dielectric properties of MoS{sub 2}-MoX{sub 2} heterostructures. United States: N. p., 2015. Web. doi:10.1063/1.4915419.
Sharma, Munish, E-mail: munishsharmahpu@live.com, Jamdagni, Pooja, Ahluwalia, P. K, E-mail: pk-ahluwalia7@yahoo.com, & Kumar, Ashok. Electronic and dielectric properties of MoS{sub 2}-MoX{sub 2} heterostructures. United States. doi:10.1063/1.4915419.
Sharma, Munish, E-mail: munishsharmahpu@live.com, Jamdagni, Pooja, Ahluwalia, P. K, E-mail: pk-ahluwalia7@yahoo.com, and Kumar, Ashok. Fri . "Electronic and dielectric properties of MoS{sub 2}-MoX{sub 2} heterostructures". United States. doi:10.1063/1.4915419.
@article{osti_22391738,
title = {Electronic and dielectric properties of MoS{sub 2}-MoX{sub 2} heterostructures},
author = {Sharma, Munish, E-mail: munishsharmahpu@live.com and Jamdagni, Pooja and Ahluwalia, P. K, E-mail: pk-ahluwalia7@yahoo.com and Kumar, Ashok},
abstractNote = {We present a comparative study of electronic and dielectric properties of MoS{sub 2}−MoX{sub 2} heteostructures (where X=S, Se, Te) within the framework of density functional theory (DFT). Electronic band structure, real and imaginary part of dielectric function, electron energy loss spectra and static dielectric constant have been calculated for each system and compared with one another. A systematic decrease/increase in band gap/static dielectric constant is observed as the X changes from S to Te. These results provide a physical basis for the potential applications of these heterostructures in optoelectronic devices.},
doi = {10.1063/1.4915419},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1661,
place = {United States},
year = {2015},
month = {5}
}