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Title: Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)

Abstract

In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence.

Authors:
; ;  [1]; ;  [1];  [2]
  1. Material Research Laboratory, Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Madhya Pradesh-452017 (India)
  2. (India)
Publication Date:
OSTI Identifier:
22391737
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CONFINEMENT; ELECTRONIC STRUCTURE; ENERGY GAP; ETCHING; EV RANGE; NANOWIRES; PHOTOLUMINESCENCE; SILICON; SPECTRAL REFLECTANCE; SUBSTRATES

Citation Formats

Saxena, Shailendra K., E-mail: shailendra.saxena3@gmail.com, Rai, Hari. M., Late, Ravikiran, Sagdeo, Pankaj R., Kumar, Rajesh, and Material Science and Engineering Group, Indian Institute of Technology Indore, Madhya Pradesh-452017. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE). United States: N. p., 2015. Web. doi:10.1063/1.4915418.
Saxena, Shailendra K., E-mail: shailendra.saxena3@gmail.com, Rai, Hari. M., Late, Ravikiran, Sagdeo, Pankaj R., Kumar, Rajesh, & Material Science and Engineering Group, Indian Institute of Technology Indore, Madhya Pradesh-452017. Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE). United States. doi:10.1063/1.4915418.
Saxena, Shailendra K., E-mail: shailendra.saxena3@gmail.com, Rai, Hari. M., Late, Ravikiran, Sagdeo, Pankaj R., Kumar, Rajesh, and Material Science and Engineering Group, Indian Institute of Technology Indore, Madhya Pradesh-452017. Fri . "Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)". United States. doi:10.1063/1.4915418.
@article{osti_22391737,
title = {Origin of photoluminescence from silicon nanowires prepared by metal induced etching (MIE)},
author = {Saxena, Shailendra K., E-mail: shailendra.saxena3@gmail.com and Rai, Hari. M. and Late, Ravikiran and Sagdeo, Pankaj R. and Kumar, Rajesh and Material Science and Engineering Group, Indian Institute of Technology Indore, Madhya Pradesh-452017},
abstractNote = {In this present study the origin of luminescence from silicon nanowires (SiNws) has been studied. SiNWs are fabricated on Si substrate by metal induced chemical etching (MIE). Here it is found that the band gap of SiNWs is higher than the gap of luminescent states in SiNWs which leads to the effect of Si=O bond. The band gap is estimated from diffuse reflectance analysis. Here we observe that band gap can be tailored depending on size (quantum confinement) but photoluminescence (PL) from all the sample is found to be fixed at 1.91 eV. This study is important for the understanding of origin of photoluminescence.},
doi = {10.1063/1.4915418},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1661,
place = {United States},
year = {2015},
month = {5}
}