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Title: Electronic, mechanical and dielectric properties of silicane under tensile strain

Abstract

The electronic, mechanical and dielectric properties of fully hydrogenated silicene i.e. silicane in stable configuration are studied by means of density functional theory based calculations. The band gap of silicane monolayer can be flexibly reduced to zero when subjected to bi-axial tensile strain, leading to semi-conducting to metallic transition, whereas the static dielectric constant for in-plane polarization increases monotonically with increasing strain. Also the EEL function show the red shift in resonance peak with tensile strain. Our results offer useful insight for the application of silicane monolayer in nano-optical and electronics devices.

Authors:
; ;  [1];  [2];  [3]
  1. Physics Department, Himachal Pradesh University, Shimla, Himachal Pradesh, India 171005 (India)
  2. Physics Department, Panjab University, Chandigarh, India, 160014 (India)
  3. Physics Department, Govt. Collage Solan, Himachal Pradesh, India,173212 (India)
Publication Date:
OSTI Identifier:
22391719
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1661; Journal Issue: 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGENATION; PERMITTIVITY; PHASE TRANSFORMATIONS; POLARIZATION; RED SHIFT; SILICENE; STRAINS

Citation Formats

Jamdagni, Pooja, E-mail: j.poojaa1228@gmail.com, Sharma, Munish, Ahluwalia, P. K., Kumar, Ashok, and Thakur, Anil. Electronic, mechanical and dielectric properties of silicane under tensile strain. United States: N. p., 2015. Web. doi:10.1063/1.4915398.
Jamdagni, Pooja, E-mail: j.poojaa1228@gmail.com, Sharma, Munish, Ahluwalia, P. K., Kumar, Ashok, & Thakur, Anil. Electronic, mechanical and dielectric properties of silicane under tensile strain. United States. doi:10.1063/1.4915398.
Jamdagni, Pooja, E-mail: j.poojaa1228@gmail.com, Sharma, Munish, Ahluwalia, P. K., Kumar, Ashok, and Thakur, Anil. Fri . "Electronic, mechanical and dielectric properties of silicane under tensile strain". United States. doi:10.1063/1.4915398.
@article{osti_22391719,
title = {Electronic, mechanical and dielectric properties of silicane under tensile strain},
author = {Jamdagni, Pooja, E-mail: j.poojaa1228@gmail.com and Sharma, Munish and Ahluwalia, P. K. and Kumar, Ashok and Thakur, Anil},
abstractNote = {The electronic, mechanical and dielectric properties of fully hydrogenated silicene i.e. silicane in stable configuration are studied by means of density functional theory based calculations. The band gap of silicane monolayer can be flexibly reduced to zero when subjected to bi-axial tensile strain, leading to semi-conducting to metallic transition, whereas the static dielectric constant for in-plane polarization increases monotonically with increasing strain. Also the EEL function show the red shift in resonance peak with tensile strain. Our results offer useful insight for the application of silicane monolayer in nano-optical and electronics devices.},
doi = {10.1063/1.4915398},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1661,
place = {United States},
year = {2015},
month = {5}
}