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Title: Computational stochastic model of ions implantation

Abstract

Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.

Authors:
;  [1];  [2];  [3]
  1. M.V. Keldysh Institute of Applied Mathematics RAS, 4,Miusskaya sq., 125047 Moscow (Russian Federation)
  2. VNII Geosystem Russian Federal Center, Varshavskoye roadway, 8, Moscow (Russian Federation)
  3. Scuola di Lettere e BeniCulturali, University di Bologna, sede di Ravenna, via Mariani 5, 48100 Ravenna (Italy)
Publication Date:
OSTI Identifier:
22391061
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1648; Journal Issue: 1; Conference: ICNAAM-2014: International Conference on Numerical Analysis and Applied Mathematics 2014, Rhodes (Greece), 22-28 Sep 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BROWNIAN MOVEMENT; CRYSTALS; DIELECTRIC MATERIALS; DIFFERENTIAL EQUATIONS; DISTRIBUTION FUNCTIONS; GASES; ION IMPLANTATION; IRRADIATION; KINETIC EQUATIONS; NUCLEATION; PHASE TRANSFORMATIONS; POROSITY; STOCHASTIC PROCESSES; STRESSES; SURFACES; THIN FILMS; VACANCIES; XENON IONS

Citation Formats

Zmievskaya, Galina I., E-mail: zmi@gmail.ru, Bondareva, Anna L., E-mail: bal310775@yandex.ru, Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru, and Maino, Giuseppe, E-mail: giuseppe.maino@enea.it. Computational stochastic model of ions implantation. United States: N. p., 2015. Web. doi:10.1063/1.4912495.
Zmievskaya, Galina I., E-mail: zmi@gmail.ru, Bondareva, Anna L., E-mail: bal310775@yandex.ru, Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru, & Maino, Giuseppe, E-mail: giuseppe.maino@enea.it. Computational stochastic model of ions implantation. United States. doi:10.1063/1.4912495.
Zmievskaya, Galina I., E-mail: zmi@gmail.ru, Bondareva, Anna L., E-mail: bal310775@yandex.ru, Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru, and Maino, Giuseppe, E-mail: giuseppe.maino@enea.it. Tue . "Computational stochastic model of ions implantation". United States. doi:10.1063/1.4912495.
@article{osti_22391061,
title = {Computational stochastic model of ions implantation},
author = {Zmievskaya, Galina I., E-mail: zmi@gmail.ru and Bondareva, Anna L., E-mail: bal310775@yandex.ru and Levchenko, Tatiana V., E-mail: tatlevchenko@mail.ru and Maino, Giuseppe, E-mail: giuseppe.maino@enea.it},
abstractNote = {Implantation flux ions into crystal leads to phase transition /PT/ 1-st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, Kolmogorov-Feller and Einstein-Smolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.},
doi = {10.1063/1.4912495},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1648,
place = {United States},
year = {Tue Mar 10 00:00:00 EDT 2015},
month = {Tue Mar 10 00:00:00 EDT 2015}
}