Computational stochastic model of ions implantation
Abstract
Implantation flux ions into crystal leads to phase transition /PT/ 1st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, KolmogorovFeller and EinsteinSmolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.
 Authors:
 M.V. Keldysh Institute of Applied Mathematics RAS, 4,Miusskaya sq., 125047 Moscow (Russian Federation)
 VNII Geosystem Russian Federal Center, Varshavskoye roadway, 8, Moscow (Russian Federation)
 Scuola di Lettere e BeniCulturali, University di Bologna, sede di Ravenna, via Mariani 5, 48100 Ravenna (Italy)
 Publication Date:
 OSTI Identifier:
 22391061
 Resource Type:
 Journal Article
 Resource Relation:
 Journal Name: AIP Conference Proceedings; Journal Volume: 1648; Journal Issue: 1; Conference: ICNAAM2014: International Conference on Numerical Analysis and Applied Mathematics 2014, Rhodes (Greece), 2228 Sep 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BROWNIAN MOVEMENT; CRYSTALS; DIELECTRIC MATERIALS; DIFFERENTIAL EQUATIONS; DISTRIBUTION FUNCTIONS; GASES; ION IMPLANTATION; IRRADIATION; KINETIC EQUATIONS; NUCLEATION; PHASE TRANSFORMATIONS; POROSITY; STOCHASTIC PROCESSES; STRESSES; SURFACES; THIN FILMS; VACANCIES; XENON IONS
Citation Formats
Zmievskaya, Galina I., Email: zmi@gmail.ru, Bondareva, Anna L., Email: bal310775@yandex.ru, Levchenko, Tatiana V., Email: tatlevchenko@mail.ru, and Maino, Giuseppe, Email: giuseppe.maino@enea.it. Computational stochastic model of ions implantation. United States: N. p., 2015.
Web. doi:10.1063/1.4912495.
Zmievskaya, Galina I., Email: zmi@gmail.ru, Bondareva, Anna L., Email: bal310775@yandex.ru, Levchenko, Tatiana V., Email: tatlevchenko@mail.ru, & Maino, Giuseppe, Email: giuseppe.maino@enea.it. Computational stochastic model of ions implantation. United States. doi:10.1063/1.4912495.
Zmievskaya, Galina I., Email: zmi@gmail.ru, Bondareva, Anna L., Email: bal310775@yandex.ru, Levchenko, Tatiana V., Email: tatlevchenko@mail.ru, and Maino, Giuseppe, Email: giuseppe.maino@enea.it. 2015.
"Computational stochastic model of ions implantation". United States.
doi:10.1063/1.4912495.
@article{osti_22391061,
title = {Computational stochastic model of ions implantation},
author = {Zmievskaya, Galina I., Email: zmi@gmail.ru and Bondareva, Anna L., Email: bal310775@yandex.ru and Levchenko, Tatiana V., Email: tatlevchenko@mail.ru and Maino, Giuseppe, Email: giuseppe.maino@enea.it},
abstractNote = {Implantation flux ions into crystal leads to phase transition /PT/ 1st kind. Damaging lattice is associated with processes clustering vacancies and gaseous bubbles as well their brownian motion. System of stochastic differential equations /SDEs/ Ito for evolution stochastic dynamical variables corresponds to the superposition Wiener processes. The kinetic equations in partial derivatives /KE/, KolmogorovFeller and EinsteinSmolukhovskii, were formulated for nucleation into lattice of weakly soluble gases. According theory, coefficients of stochastic and kinetic equations uniquely related. Radiation stimulated phase transition are characterized by kinetic distribution functions /DFs/ of implanted clusters versus their sizes and depth of gas penetration into lattice. Macroscopic parameters of kinetics such as the porosity and stress calculated in thin layers metal/dielectric due to Xe{sup ++} irradiation are attracted as example. Predictions of porosity, important for validation accumulation stresses in surfaces, can be applied at restoring of objects the cultural heritage.},
doi = {10.1063/1.4912495},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1648,
place = {United States},
year = 2015,
month = 3
}

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