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Title: Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

Abstract

A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

Authors:
; ; ;  [1];  [2];  [3];  [4]
  1. Superlum Diodes Ltd., Moscow (Russian Federation)
  2. 'Sigm Plyus' Ltd, Moscow (Russian Federation)
  3. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
  4. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22373691
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 43; Journal Issue: 11; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMPLIFIERS; FIBERS; LASERS; NEAR INFRARED RADIATION; SEMICONDUCTOR MATERIALS; SIGNALS; TRAVELLING WAVES

Citation Formats

Andreeva, E V, Il'chenko, S N, Lobintsov, A A, Shramenko, M V, Ladugin, M A, Marmalyuk, A A, and Yakubovich, S D. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm. United States: N. p., 2013. Web. doi:10.1070/QE2013V043N11ABEH015248.
Andreeva, E V, Il'chenko, S N, Lobintsov, A A, Shramenko, M V, Ladugin, M A, Marmalyuk, A A, & Yakubovich, S D. Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm. United States. https://doi.org/10.1070/QE2013V043N11ABEH015248
Andreeva, E V, Il'chenko, S N, Lobintsov, A A, Shramenko, M V, Ladugin, M A, Marmalyuk, A A, and Yakubovich, S D. 2013. "Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm". United States. https://doi.org/10.1070/QE2013V043N11ABEH015248.
@article{osti_22373691,
title = {Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm},
author = {Andreeva, E V and Il'chenko, S N and Lobintsov, A A and Shramenko, M V and Ladugin, M A and Marmalyuk, A A and Yakubovich, S D},
abstractNote = {A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)},
doi = {10.1070/QE2013V043N11ABEH015248},
url = {https://www.osti.gov/biblio/22373691}, journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 11,
volume = 43,
place = {United States},
year = {Sat Nov 30 00:00:00 EST 2013},
month = {Sat Nov 30 00:00:00 EST 2013}
}