skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation

Abstract

The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches of two types of ICs. A correlation between these data and the results of full-chip scanning is found for each type. The criteria for express validation of IC single-event effect (SEE) hardness based on ionisation response measurements at selected points are discussed. (laser applications and other topics in quantum electronics)

Authors:
; ; ; ;  [1]
  1. National Research Nuclear University ''MEPhI'' (Russian Federation)
Publication Date:
OSTI Identifier:
22373330
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 44; Journal Issue: 12; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; INTEGRATED CIRCUITS; LASER RADIATION; LASERS; PULSES; QUANTUM ELECTRONICS; SENSITIVITY; STATISTICS

Citation Formats

Gordienko, A V, Mavritskii, O B, Egorov, A N, Pechenkin, A A, and Savchenkov, D V. Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation. United States: N. p., 2014. Web. doi:10.1070/QE2014V044N12ABEH015519.
Gordienko, A V, Mavritskii, O B, Egorov, A N, Pechenkin, A A, & Savchenkov, D V. Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation. United States. doi:10.1070/QE2014V044N12ABEH015519.
Gordienko, A V, Mavritskii, O B, Egorov, A N, Pechenkin, A A, and Savchenkov, D V. Wed . "Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation". United States. doi:10.1070/QE2014V044N12ABEH015519.
@article{osti_22373330,
title = {Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation},
author = {Gordienko, A V and Mavritskii, O B and Egorov, A N and Pechenkin, A A and Savchenkov, D V},
abstractNote = {The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches of two types of ICs. A correlation between these data and the results of full-chip scanning is found for each type. The criteria for express validation of IC single-event effect (SEE) hardness based on ionisation response measurements at selected points are discussed. (laser applications and other topics in quantum electronics)},
doi = {10.1070/QE2014V044N12ABEH015519},
journal = {Quantum Electronics (Woodbury, N.Y.)},
number = 12,
volume = 44,
place = {United States},
year = {Wed Dec 31 00:00:00 EST 2014},
month = {Wed Dec 31 00:00:00 EST 2014}
}