InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4897342· OSTI ID:22350840

Krishnamoorthy, Sriram; Akyol, Fatih ^[1]; Rajan, Siddharth ^[1]

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1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

• OSTI ID: 22350840
• Journal Information: Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONTACTS
GALLIUM NITRIDES
HOLES
IMPURITIES
INDIUM COMPOUNDS
INJECTION
INTERFACES
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
PLASMA
P-N JUNCTIONS
SEMICONDUCTOR JUNCTIONS
TUNNEL EFFECT
VISIBLE RADIATION
VOLTAGE DROP