Temperature and bias-voltage dependence of atomic-layer-deposited HfO{sub 2}-based magnetic tunnel junctions

Journal Article · Mon Sep 29 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896994· OSTI ID:22350804

Fabretti, Savio ^[1]; Zierold, Robert; Nielsch, Kornelius ^[2]; Voigt, Carmen; Ronning, Carsten ^[3]; Peretzki, Patrick; Seibt, Michael ^[4]; Thomas, Andy ^[5]

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1. Thin Films and Physics of Nanostructures, Bielefeld University, Universitaetsstrasse 25, 33615 Bielefeld (Germany)
2. Institute of Applied Physics, Universität Hamburg, Jungiusstrasse 11, 20355 Hamburg (Germany)
3. Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena (Germany)
4. 4. Physikalisches Institut, Georg-August University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany)
5. Thin Films and Physics of Nanostructures, Universitaetsstrasse 25, 33615 Bielefeld, Germany, and Institut für Physik, Johannes Gutenberg Universität Mainz, Staudingerweg 9, 55128 Mainz (Germany)

Magnetic tunnel junctions with HfO{sub 2} tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina- and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy.

• OSTI ID: 22350804
• Journal Information: Applied Physics Letters, Vol. 105, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CURRENTS
DEPOSITION
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
HAFNIUM OXIDES
LAYERS
MAGNESIUM OXIDES
MAGNETORESISTANCE
MAGNETRONS
POLYCRYSTALS
RESOLUTION
SPUTTERING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT