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Title: Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films

Abstract

We utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ{sub 0} ∼ 6×10{sup −3}, where d is the film thickness and  λ{sub 0} is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.

Authors:
 [1]; ;  [2]
  1. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
22350779
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTENNAS; DENSITY; DISPERSIONS; DOPED MATERIALS; EMISSION; EMISSION SPECTRA; POLARIZATION; POLARONS; SCATTERING; SEMICONDUCTOR MATERIALS; THERMAL RADIATION; THICKNESS; THIN FILMS; VISIBLE RADIATION; WAVELENGTHS

Citation Formats

Jun, Young Chul, E-mail: youngchul.jun@inha.ac.kr, Luk, Ting S., E-mail: tsluk@sandia.gov, Brener, Igal, Sandia National Laboratories, Albuquerque, New Mexico 87185, Robert Ellis, A., and Klem, John F. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. United States: N. p., 2014. Web. doi:10.1063/1.4896573.
Jun, Young Chul, E-mail: youngchul.jun@inha.ac.kr, Luk, Ting S., E-mail: tsluk@sandia.gov, Brener, Igal, Sandia National Laboratories, Albuquerque, New Mexico 87185, Robert Ellis, A., & Klem, John F. Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films. United States. https://doi.org/10.1063/1.4896573
Jun, Young Chul, E-mail: youngchul.jun@inha.ac.kr, Luk, Ting S., E-mail: tsluk@sandia.gov, Brener, Igal, Sandia National Laboratories, Albuquerque, New Mexico 87185, Robert Ellis, A., and Klem, John F. Mon . "Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films". United States. https://doi.org/10.1063/1.4896573.
@article{osti_22350779,
title = {Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films},
author = {Jun, Young Chul, E-mail: youngchul.jun@inha.ac.kr and Luk, Ting S., E-mail: tsluk@sandia.gov and Brener, Igal and Sandia National Laboratories, Albuquerque, New Mexico 87185 and Robert Ellis, A. and Klem, John F.},
abstractNote = {We utilize the unique dispersion properties of leaky plasmon polaritons in epsilon-near-zero (ENZ) thin films to demonstrate thermal radiation control. Owing to its highly flat dispersion above the light line, a thermally excited leaky wave at the ENZ frequency out-couples into free space without any scattering structures, resulting in a narrowband, wide-angle, p-polarized thermal emission spectrum. We demonstrate this idea by measuring angle- and polarization-resolved thermal emission spectra from a single layer of unpatterned, doped semiconductors with deep-subwavelength film thickness (d/λ{sub 0} ∼ 6×10{sup −3}, where d is the film thickness and  λ{sub 0} is the free space wavelength). We show that this semiconductor ENZ film effectively works as a leaky wave thermal radiation antenna, which generates far-field radiation from a thermally excited mode. The use of semiconductors makes the radiation frequency highly tunable by controlling doping densities and also facilitates device integration with other components. Therefore, this leaky plasmon polariton emission from semiconductor ENZ films provides an avenue for on-chip control of thermal radiation.},
doi = {10.1063/1.4896573},
url = {https://www.osti.gov/biblio/22350779}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}