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Title: Advanced passivation techniques for Si solar cells with high-κ dielectric materials

Abstract

Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al{sub 2}O{sub 3}, HfO{sub 2}) and their compounds H{sub (Hf)}A{sub (Al)}O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al{sub 2}O{sub 3} film has been found to provide negative fixed charge (−6.4 × 10{sup 11 }cm{sup −2}), whereas HfO{sub 2} film provides positive fixed charge (3.2 × 10{sup 12 }cm{sup −2}). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO{sub 2} film would provide better passivation properties than that of the ALD-Al{sub 2}O{sub 3} film in this research work.

Authors:
 [1]; ;  [2];  [1];  [3]; ;  [4];  [5];  [5];  [6]
  1. Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240 (China)
  2. Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
  3. (China)
  4. Nikolaev Institute of Inorganic Chemistry, 630090 Novosibirsk (Russian Federation)
  5. Boreskov Institute of Catalysis, 630090 Novosibirsk (Russian Federation)
  6. (Russian Federation)
Publication Date:
OSTI Identifier:
22350772
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CHEMICAL COMPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; FILMS; HAFNIUM OXIDES; LAYERS; LIFETIME; LOSSES; PASSIVATION; RECOMBINATION; SOLAR CELLS; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Geng, Huijuan, Lin, Tingjui, Letha, Ayra Jagadhamma, Hwang, Huey-Liang, E-mail: hlhwang@sjtu.edu.cn, Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Kyznetsov, Fedor A., Smirnova, Tamara P., Saraev, Andrey A., Kaichev, Vasily V., and Novosibirsk State University, 630090 Novosibirsk. Advanced passivation techniques for Si solar cells with high-κ dielectric materials. United States: N. p., 2014. Web. doi:10.1063/1.4896619.
Geng, Huijuan, Lin, Tingjui, Letha, Ayra Jagadhamma, Hwang, Huey-Liang, E-mail: hlhwang@sjtu.edu.cn, Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Kyznetsov, Fedor A., Smirnova, Tamara P., Saraev, Andrey A., Kaichev, Vasily V., & Novosibirsk State University, 630090 Novosibirsk. Advanced passivation techniques for Si solar cells with high-κ dielectric materials. United States. doi:10.1063/1.4896619.
Geng, Huijuan, Lin, Tingjui, Letha, Ayra Jagadhamma, Hwang, Huey-Liang, E-mail: hlhwang@sjtu.edu.cn, Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, Kyznetsov, Fedor A., Smirnova, Tamara P., Saraev, Andrey A., Kaichev, Vasily V., and Novosibirsk State University, 630090 Novosibirsk. Mon . "Advanced passivation techniques for Si solar cells with high-κ dielectric materials". United States. doi:10.1063/1.4896619.
@article{osti_22350772,
title = {Advanced passivation techniques for Si solar cells with high-κ dielectric materials},
author = {Geng, Huijuan and Lin, Tingjui and Letha, Ayra Jagadhamma and Hwang, Huey-Liang, E-mail: hlhwang@sjtu.edu.cn and Department of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan and Kyznetsov, Fedor A. and Smirnova, Tamara P. and Saraev, Andrey A. and Kaichev, Vasily V. and Novosibirsk State University, 630090 Novosibirsk},
abstractNote = {Electronic recombination losses at the wafer surface significantly reduce the efficiency of Si solar cells. Surface passivation using a suitable thin dielectric layer can minimize the recombination losses. Herein, advanced passivation using simple materials (Al{sub 2}O{sub 3}, HfO{sub 2}) and their compounds H{sub (Hf)}A{sub (Al)}O deposited by atomic layer deposition (ALD) was investigated. The chemical composition of Hf and Al oxide films were determined by X-ray photoelectron spectroscopy (XPS). The XPS depth profiles exhibit continuous uniform dense layers. The ALD-Al{sub 2}O{sub 3} film has been found to provide negative fixed charge (−6.4 × 10{sup 11 }cm{sup −2}), whereas HfO{sub 2} film provides positive fixed charge (3.2 × 10{sup 12 }cm{sup −2}). The effective lifetimes can be improved after oxygen gas annealing for 1 min. I-V characteristics of Si solar cells with high-κ dielectric materials as passivation layers indicate that the performance is significantly improved, and ALD-HfO{sub 2} film would provide better passivation properties than that of the ALD-Al{sub 2}O{sub 3} film in this research work.},
doi = {10.1063/1.4896619},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}