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Title: The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices

Abstract

The prototypical charge-trapping memory devices with the structure p-Si/Al{sub 2}O{sub 3}/(Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/Pt(x = 0.5, 0.3, and 0.1) were fabricated by using atomic layer deposition and RF magnetron sputtering techniques. A memory window of 7.39 V with a charge storage density of 1.97 × 10{sup 13 }cm{sup −2} at a gate voltage of ±11 V was obtained for the memory device with the composite charge trapping layer (Ta{sub 2}O{sub 5}){sub 0.5}(Al{sub 2}O{sub 3}){sub 0.5}. All memory devices show fast program/erase speed and excellent endurance and retention properties, although some differences in their memory performance exist, which was ascribed to the relative individual band alignments of the composite (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} with Si.

Authors:
;  [1]; ; ; ; ; ; ; ; ; ; ;  [2]
  1. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
  2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22350768
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; COMPOSITE MATERIALS; DENSITY; ELECTRIC POTENTIAL; LAYERS; MAGNETRONS; MEMORY DEVICES; SILICON; TANTALUM OXIDES; TRAPPING

Citation Formats

Gong, Changjie, Lan, Xuexin, Yin, Qiaonan, Ou, Xin, Liu, Jinqiu, Sun, Chong, Wang, Laiguo, Lu, Wei, Yin, Jiang, E-mail: jyin@nju.edu.cn, Xu, Bo, Xia, Yidong, Liu, Zhiguo, and Li, Aidong. The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices. United States: N. p., 2014. Web. doi:10.1063/1.4896595.
Gong, Changjie, Lan, Xuexin, Yin, Qiaonan, Ou, Xin, Liu, Jinqiu, Sun, Chong, Wang, Laiguo, Lu, Wei, Yin, Jiang, E-mail: jyin@nju.edu.cn, Xu, Bo, Xia, Yidong, Liu, Zhiguo, & Li, Aidong. The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices. United States. doi:10.1063/1.4896595.
Gong, Changjie, Lan, Xuexin, Yin, Qiaonan, Ou, Xin, Liu, Jinqiu, Sun, Chong, Wang, Laiguo, Lu, Wei, Yin, Jiang, E-mail: jyin@nju.edu.cn, Xu, Bo, Xia, Yidong, Liu, Zhiguo, and Li, Aidong. Mon . "The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices". United States. doi:10.1063/1.4896595.
@article{osti_22350768,
title = {The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices},
author = {Gong, Changjie and Lan, Xuexin and Yin, Qiaonan and Ou, Xin and Liu, Jinqiu and Sun, Chong and Wang, Laiguo and Lu, Wei and Yin, Jiang, E-mail: jyin@nju.edu.cn and Xu, Bo and Xia, Yidong and Liu, Zhiguo and Li, Aidong},
abstractNote = {The prototypical charge-trapping memory devices with the structure p-Si/Al{sub 2}O{sub 3}/(Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/Pt(x = 0.5, 0.3, and 0.1) were fabricated by using atomic layer deposition and RF magnetron sputtering techniques. A memory window of 7.39 V with a charge storage density of 1.97 × 10{sup 13 }cm{sup −2} at a gate voltage of ±11 V was obtained for the memory device with the composite charge trapping layer (Ta{sub 2}O{sub 5}){sub 0.5}(Al{sub 2}O{sub 3}){sub 0.5}. All memory devices show fast program/erase speed and excellent endurance and retention properties, although some differences in their memory performance exist, which was ascribed to the relative individual band alignments of the composite (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} with Si.},
doi = {10.1063/1.4896595},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}