skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems

Abstract

The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.

Authors:
; ; ;  [1];  [2]
  1. Department of Physics, Budapest University of Technology and Economics and Condensed Matter Research Group of the Hungarian Academy of Sciences, Budafoki út 8, H-1111 Budapest (Hungary)
  2. MEMS Lab, Institute for Technical Physics and Materials Science, RCNS, HAS, Konkoly-Thege út 29-33, H-1121 Budapest (Hungary)
Publication Date:
OSTI Identifier:
22350763
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; FILMS; GRAPHENE; MOBILITY; NANOSTRUCTURES; SILICON; SILICON NITRIDES; SILICON OXIDES; STABILITY; STOICHIOMETRY; THICKNESS

Citation Formats

Tóvári, E., Csontos, M., E-mail: csontos@dept.phy.bme.hu, Kriváchy, T., Csonka, S., and Fürjes, P. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems. United States: N. p., 2014. Web. doi:10.1063/1.4896515.
Tóvári, E., Csontos, M., E-mail: csontos@dept.phy.bme.hu, Kriváchy, T., Csonka, S., & Fürjes, P. Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems. United States. doi:10.1063/1.4896515.
Tóvári, E., Csontos, M., E-mail: csontos@dept.phy.bme.hu, Kriváchy, T., Csonka, S., and Fürjes, P. Mon . "Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems". United States. doi:10.1063/1.4896515.
@article{osti_22350763,
title = {Characterization of SiO{sub 2}/SiN{sub x} gate insulators for graphene based nanoelectromechanical systems},
author = {Tóvári, E. and Csontos, M., E-mail: csontos@dept.phy.bme.hu and Kriváchy, T. and Csonka, S. and Fürjes, P.},
abstractNote = {The structural and magnetotransport characterization of graphene nanodevices exfoliated onto Si/SiO{sub 2}/SiN{sub x} heterostructures are presented. Improved visibility of the deposited flakes is achieved by optimal tuning of the dielectric film thicknesses. The conductance of single layer graphene Hall-bar nanostructures utilizing SiO{sub 2}/SiN{sub x} gate dielectrics were characterized in the quantum Hall regime. Our results highlight that, while exhibiting better mechanical and chemical stability, the effect of non-stoichiometric SiN{sub x} on the charge carrier mobility of graphene is comparable to that of SiO{sub 2}, demonstrating the merits of SiN{sub x} as an ideal material platform for graphene based nanoelectromechanical applications.},
doi = {10.1063/1.4896515},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}