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Title: Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

Abstract

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Authors:
 [1];  [2]; ; ;  [1];  [3]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. (China)
  3. Department of Physics, University of Science and Technology Beijing, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22350754
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRITICAL CURRENT; ELASTICITY; MAGNESIUM OXIDES; MAGNETIZATION; SIMULATION; SPIN; STRAINS; SUBSTRATES; TUNNEL DIODES; TUNNEL EFFECT

Citation Formats

Huang, H. B., E-mail: houbinghuang@gmail.com, Department of Physics, University of Science and Technology Beijing, Beijing 100083, Hu, J. M., Yang, T. N., Chen, L. Q., and Ma, X. Q. Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity. United States: N. p., 2014. Web. doi:10.1063/1.4896692.
Huang, H. B., E-mail: houbinghuang@gmail.com, Department of Physics, University of Science and Technology Beijing, Beijing 100083, Hu, J. M., Yang, T. N., Chen, L. Q., & Ma, X. Q. Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity. United States. doi:10.1063/1.4896692.
Huang, H. B., E-mail: houbinghuang@gmail.com, Department of Physics, University of Science and Technology Beijing, Beijing 100083, Hu, J. M., Yang, T. N., Chen, L. Q., and Ma, X. Q. Mon . "Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity". United States. doi:10.1063/1.4896692.
@article{osti_22350754,
title = {Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity},
author = {Huang, H. B., E-mail: houbinghuang@gmail.com and Department of Physics, University of Science and Technology Beijing, Beijing 100083 and Hu, J. M. and Yang, T. N. and Chen, L. Q. and Ma, X. Q.},
abstractNote = {Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.},
doi = {10.1063/1.4896692},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}