skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Solution-processed amorphous silicon surface passivation layers

Abstract

Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Helmholtz-Zentrum Berlin, Institute of Silicon Photovoltaics, Kekuléstraße 5, D-12489 Berlin (Germany)
  2. Evonik Industries AG, Creavis Technologies and Innovation, Paul-Baumann-Straße 1, D-45772 Marl (Germany)
Publication Date:
OSTI Identifier:
22350752
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; HYDROGEN; INJECTION; LAYERS; LIFETIME; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SILICON; SURFACES; THIN FILMS; X RADIATION

Citation Formats

Mews, Mathias, E-mail: mathias.mews@helmholtz-berlin.de, Sontheimer, Tobias, Korte, Lars, Rech, Bernd, Mader, Christoph, Traut, Stephan, and Wunnicke, Odo. Solution-processed amorphous silicon surface passivation layers. United States: N. p., 2014. Web. doi:10.1063/1.4896687.
Mews, Mathias, E-mail: mathias.mews@helmholtz-berlin.de, Sontheimer, Tobias, Korte, Lars, Rech, Bernd, Mader, Christoph, Traut, Stephan, & Wunnicke, Odo. Solution-processed amorphous silicon surface passivation layers. United States. doi:10.1063/1.4896687.
Mews, Mathias, E-mail: mathias.mews@helmholtz-berlin.de, Sontheimer, Tobias, Korte, Lars, Rech, Bernd, Mader, Christoph, Traut, Stephan, and Wunnicke, Odo. Mon . "Solution-processed amorphous silicon surface passivation layers". United States. doi:10.1063/1.4896687.
@article{osti_22350752,
title = {Solution-processed amorphous silicon surface passivation layers},
author = {Mews, Mathias, E-mail: mathias.mews@helmholtz-berlin.de and Sontheimer, Tobias and Korte, Lars and Rech, Bernd and Mader, Christoph and Traut, Stephan and Wunnicke, Odo},
abstractNote = {Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37 ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724 mV was achieved, demonstrating excellent silicon surface passivation.},
doi = {10.1063/1.4896687},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}