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Title: Intentional anisotropic strain relaxation in (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N one-dimensionally lattice matched to GaN

Abstract

We report on (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N grown by low pressure metal organic vapor phase epitaxy on (112{sup ¯}2) GaN templates on patterned r-plane sapphire. The indium incorporation efficiency as well as the growth rate of (112{sup ¯}2) oriented layers are similar to c-plane oriented Al{sub 1−x}In{sub x}N layers. Deposition of thick Al{sub 1−x}In{sub x}N layers does not lead to additional roughening like in case of c-plane oriented Al{sub 1−x}In{sub x}N. Independent of the thickness, the degree of relaxation of layers lattice matched in m-direction is in the range of 33%–45% in [112{sup ¯}3{sup ¯}]-direction. Associated with the relaxation in [112{sup ¯}3{sup ¯}]-direction, there is a tilt of the Al{sub 1−x}In{sub x}N layers around the [11{sup ¯}00] axis due to slip of threading dislocations on the basal (0001)-plane. Relaxation in m-direction is not observable for layers lattice matched in [112{sup ¯}3{sup ¯}] direction. The possibility to adjust the lattice parameter of AlInN in [112{sup ¯}3{sup ¯}] direction without changing the lattice parameter in m-direction by anisotropic strain relaxation opens up opportunities for subsequent growth of optically active structures. One possibility is to form relaxed buffer layers for GaInN quantum well structures.

Authors:
;  [1]; ;  [1];  [2]; ; ;  [3]
  1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig (Germany)
  2. (Germany)
  3. Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)
Publication Date:
OSTI Identifier:
22350748
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; ANISOTROPY; BUFFERS; CRYSTAL GROWTH; DEPOSITION; DISLOCATIONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LATTICE PARAMETERS; LAYERS; NITROGEN COMPOUNDS; ORGANOMETALLIC COMPOUNDS; QUANTUM WELLS; RELAXATION; SAPPHIRE; STRAINS; THICKNESS; VAPOR PHASE EPITAXY

Citation Formats

Buß, E. R., E-mail: Ronald.Buss@tu-bs.de, Rossow, U., Bremers, H., Hangleiter, A., Laboratory for Emerging Nanometrology, Braunschweig, Meisch, T., Caliebe, M., and Scholz, F. Intentional anisotropic strain relaxation in (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N one-dimensionally lattice matched to GaN. United States: N. p., 2014. Web. doi:10.1063/1.4895938.
Buß, E. R., E-mail: Ronald.Buss@tu-bs.de, Rossow, U., Bremers, H., Hangleiter, A., Laboratory for Emerging Nanometrology, Braunschweig, Meisch, T., Caliebe, M., & Scholz, F. Intentional anisotropic strain relaxation in (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N one-dimensionally lattice matched to GaN. United States. doi:10.1063/1.4895938.
Buß, E. R., E-mail: Ronald.Buss@tu-bs.de, Rossow, U., Bremers, H., Hangleiter, A., Laboratory for Emerging Nanometrology, Braunschweig, Meisch, T., Caliebe, M., and Scholz, F. Mon . "Intentional anisotropic strain relaxation in (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N one-dimensionally lattice matched to GaN". United States. doi:10.1063/1.4895938.
@article{osti_22350748,
title = {Intentional anisotropic strain relaxation in (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N one-dimensionally lattice matched to GaN},
author = {Buß, E. R., E-mail: Ronald.Buss@tu-bs.de and Rossow, U. and Bremers, H. and Hangleiter, A. and Laboratory for Emerging Nanometrology, Braunschweig and Meisch, T. and Caliebe, M. and Scholz, F.},
abstractNote = {We report on (112{sup ¯}2) oriented Al{sub 1−x}In{sub x}N grown by low pressure metal organic vapor phase epitaxy on (112{sup ¯}2) GaN templates on patterned r-plane sapphire. The indium incorporation efficiency as well as the growth rate of (112{sup ¯}2) oriented layers are similar to c-plane oriented Al{sub 1−x}In{sub x}N layers. Deposition of thick Al{sub 1−x}In{sub x}N layers does not lead to additional roughening like in case of c-plane oriented Al{sub 1−x}In{sub x}N. Independent of the thickness, the degree of relaxation of layers lattice matched in m-direction is in the range of 33%–45% in [112{sup ¯}3{sup ¯}]-direction. Associated with the relaxation in [112{sup ¯}3{sup ¯}]-direction, there is a tilt of the Al{sub 1−x}In{sub x}N layers around the [11{sup ¯}00] axis due to slip of threading dislocations on the basal (0001)-plane. Relaxation in m-direction is not observable for layers lattice matched in [112{sup ¯}3{sup ¯}] direction. The possibility to adjust the lattice parameter of AlInN in [112{sup ¯}3{sup ¯}] direction without changing the lattice parameter in m-direction by anisotropic strain relaxation opens up opportunities for subsequent growth of optically active structures. One possibility is to form relaxed buffer layers for GaInN quantum well structures.},
doi = {10.1063/1.4895938},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 105,
place = {United States},
year = {2014},
month = {9}
}