Microstructures, magnetic and electric properties of diluted magnetic semiconductors InTe{sub 1−x} Fe{sub x} (Co{sub x})

Journal Article · Sat Jun 01 00:00:00 EDT 2013 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2013.02.071· OSTI ID:22341706

El-Sayed, Karimat ^[1]; Sedeek, K. ^[2]; Heiba, Z. K. ^[1]; Hantour, H. H. ^[2]

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1. X-ray Diffraction Unit, Physics Department, Faculty of Science, Ain-Shams University, Cairo (Egypt)
2. Physics Department, Faculty of Science (Girls Branch), Al-Azhar University, Cairo (Egypt)

Highlights: ► The prepared InTe{sub 0.9}Fe{sub 0.1} was found to be ferromagnetic at room temperature and can be characterized as diluted magnetic semiconductors. ► The presence of staking faults, various types of defects, strained lattice, grain boundaries and the impurity of minor non-magnetic phase were suggested to participate in high temperature ferromagnetism. - Abstract: InTe compound doped by 10% of Fe or Co respectively was synthesized. X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope (SEM), energy dispersive X-ray (EDX), vibrating sample magnetometer (VSM) and Kiethley electrometer were used for characterizing the prepared samples. XRD show the presence of InTe{sub 0.9}Fe{sub 0.1} or InTe{sub 0.9}Co{sub 0.1} together with minor In{sub 4}Te{sub 3} phase. InTe{sub 0.9}Fe{sub 0.1} is ferromagnetic with high Curie and high blocking temperature, while InTe{sub 0.9}Co{sub 0.1} is antiferromagnetic with two high Neels temperatures. σRT of InTe{sub 0.9}Fe{sub 0.1} and InTe{sub 0.9}Co{sub 0.1} are greater than those of InTe. The higher conductivity is due to the higher carrier's density obtained from the interaction of the sp-d orbitals, of the electric and magnetic system. The presence of In{sub 4}Te{sub 3} minor phase and different kinds of defects are taking major roles in the formation of high Tc ferromagnetism and antiferromagnetism.

• OSTI ID: 22341706
• Journal Information: Materials Research Bulletin, Vol. 48, Issue 6; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIFERROMAGNETISM
CARRIER DENSITY
DEFECTS
DOPED MATERIALS
ELECTRICAL PROPERTIES
FERROMAGNETISM
GRAIN BOUNDARIES
INTERACTIONS
MAGNETIC SEMICONDUCTORS
NEEL TEMPERATURE
SCANNING ELECTRON MICROSCOPY
TRANSMISSION ELECTRON MICROSCOPY
VIBRATING SAMPLE MAGNETOMETERS
X RADIATION
X-RAY DIFFRACTION