Electron density distribution and disordered crystal structure of 8H-SiAlON, Si{sub 3−x}Al{sub 1+x}O{sub x}N{sub 5−x} (x∼2.2)
The 8H-SiAlON crystal with general formula Si{sub 3−x}Al{sub 1+x}O{sub x}N{sub 5−x} was characterized using laboratory X-ray powder diffraction (CuKα{sub 1}), transmission electron microscopy and energy dispersive X-ray spectroscopy. The [Si: Al] molar ratios were determined to be [0.21(1): 0.79(1)], corresponding to x=2.2(1). The Si{sub 0.8(1)}Al{sub 3.2(1)}O{sub 2.2(1)}N{sub 2.8(1)} compound is hexagonal with space group P6{sub 3}/mmc (Z=2). The unit-cell dimensions are a=0.298877(8) nm, c=2.30872(5) nm and V=0.178602(8) nm{sup 3}. The initial structural model was successfully derived by the charge-flipping method and further refined by the Rietveld method. The final structural model showed the positional disordering of two of the three (Si,Al) sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R{sub wp}=4.74%, S (=R{sub wp}/R{sub e})=1.30, R{sub p}=3.40%, R{sub B}=1.04% and R{sub F}=0.74%. The disordered crystal structure was successfully described by overlapping four types of domains with ordered atom arrangements. The distribution of atomic positions in each of the domains can be achieved in the space group P6{sub 3}mc. Two of the four types of domains are related by a pseudo-symmetry inversion, and the two remaining domains also have each other the inversion pseudo-symmetry. - Graphical abstract: Bird's eye view of electron densities up to 49.3% (0.071 nm{sup −3}) of the maximum on the plane parallel to (110) with the corresponding atomic arrangements of Si{sub 0.8}Al{sub 3.2}O{sub 2.2}N{sub 2.8}. - Highlights: • Crystal structure of Si{sub 0.8}Al{sub 3.2}O{sub 2.2}N{sub 2.8} is determined by laboratory X-ray powder diffraction. • The atom arrangements are represented by the split-atom model. • The maximum-entropy method-based pattern fitting method is used to confirm the validity of the model. • The disordered structure is described by overlapping four types of domains with ordered atom arrangements.
- OSTI ID:
- 22334217
- Journal Information:
- Journal of Solid State Chemistry, Vol. 213; Other Information: Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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