Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

Journal Article · Mon Aug 11 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893152· OSTI ID:22320366

Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji ^[1]

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1. Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

• OSTI ID: 22320366
• Journal Information: Applied Physics Letters, Vol. 105, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONNECTORS
DOPED MATERIALS
ELECTRIC CONTACTS
ENGINEERING
GERMANIUM
GERMANIUM COMPOUNDS
ION IMPLANTATION
NICKEL COMPOUNDS
PHOSPHORUS
SCHOTTKY EFFECT
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS