skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

Abstract

The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)
Publication Date:
OSTI Identifier:
22318098
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; HYDROGEN COMPOUNDS; INDIUM NITRIDES; OPTICAL EQUIPMENT; SILICON CARBIDES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Jing, Qiang, Wu, Guoguang, Zhang, Yuantao, Gao, Fubin, Cai, Xupu, Zhao, Yang, Li, Wancheng, E-mail: liwc@jlu.edu.cn, and Du, Guotong. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy. United States: N. p., 2014. Web. doi:10.1063/1.4892525.
Jing, Qiang, Wu, Guoguang, Zhang, Yuantao, Gao, Fubin, Cai, Xupu, Zhao, Yang, Li, Wancheng, E-mail: liwc@jlu.edu.cn, & Du, Guotong. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy. United States. doi:10.1063/1.4892525.
Jing, Qiang, Wu, Guoguang, Zhang, Yuantao, Gao, Fubin, Cai, Xupu, Zhao, Yang, Li, Wancheng, E-mail: liwc@jlu.edu.cn, and Du, Guotong. Mon . "Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy". United States. doi:10.1063/1.4892525.
@article{osti_22318098,
title = {Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy},
author = {Jing, Qiang and Wu, Guoguang and Zhang, Yuantao and Gao, Fubin and Cai, Xupu and Zhao, Yang and Li, Wancheng, E-mail: liwc@jlu.edu.cn and Du, Guotong},
abstractNote = {The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.},
doi = {10.1063/1.4892525},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = {Mon Aug 11 00:00:00 EDT 2014},
month = {Mon Aug 11 00:00:00 EDT 2014}
}