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Title: Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

Abstract

We demonstrate reversible carrier density control across the Dirac point (Δn ∼ 10{sup 13 }cm{sup −2}) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

Authors:
; ; ;  [1];  [2];  [3];  [4];  [3];  [5]
  1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden)
  2. SP Technical Research Institute of Sweden, S-50115 Borås (Sweden)
  3. National Physical Laboratory, Teddington TW110LW (United Kingdom)
  4. (United Kingdom)
  5. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22318097
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; CORONA DISCHARGES; EPITAXY; GRAPHENE; SEMICONDUCTOR MATERIALS; SILICON CARBIDES

Citation Formats

Lartsev, Arseniy, Yager, Tom, Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se, Kubatkin, Sergey, Bergsten, Tobias, Tzalenchuk, Alexander, Royal Holloway, University of London, Egham TW20 0EX, Janssen, T. J. B. M, and Yakimova, Rositza. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge. United States: N. p., 2014. Web. doi:10.1063/1.4892922.
Lartsev, Arseniy, Yager, Tom, Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se, Kubatkin, Sergey, Bergsten, Tobias, Tzalenchuk, Alexander, Royal Holloway, University of London, Egham TW20 0EX, Janssen, T. J. B. M, & Yakimova, Rositza. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge. United States. doi:10.1063/1.4892922.
Lartsev, Arseniy, Yager, Tom, Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se, Kubatkin, Sergey, Bergsten, Tobias, Tzalenchuk, Alexander, Royal Holloway, University of London, Egham TW20 0EX, Janssen, T. J. B. M, and Yakimova, Rositza. Mon . "Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge". United States. doi:10.1063/1.4892922.
@article{osti_22318097,
title = {Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge},
author = {Lartsev, Arseniy and Yager, Tom and Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se and Kubatkin, Sergey and Bergsten, Tobias and Tzalenchuk, Alexander and Royal Holloway, University of London, Egham TW20 0EX and Janssen, T. J. B. M and Yakimova, Rositza},
abstractNote = {We demonstrate reversible carrier density control across the Dirac point (Δn ∼ 10{sup 13 }cm{sup −2}) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.},
doi = {10.1063/1.4892922},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = {Mon Aug 11 00:00:00 EDT 2014},
month = {Mon Aug 11 00:00:00 EDT 2014}
}