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Title: Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer

Abstract

We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.

Authors:
; ; ; ; ; ;  [1];  [1];  [2];  [3];  [4]
  1. Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)
  2. (China)
  3. Department of Physics, Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079 (China)
  4. College of Physical Science and Technology, Guangxi University, Nanning, Guangxi 530004 (China)
Publication Date:
OSTI Identifier:
22318024
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DEPLETION LAYER; ELECTROLUMINESCENCE; ELECTRONS; GALLIUM NITRIDES; HAFNIUM OXIDES; HETEROJUNCTIONS; LIGHT EMITTING DIODES; LINE NARROWING; QUANTUM DOTS; ULTRAVIOLET RADIATION; ZINC OXIDES

Citation Formats

Mo, Xiaoming, Long, Hao, Wang, Haoning, Chen, Zhao, Wan, Jiawei, Liu, Yuping, Fang, Guojia, E-mail: gjfang@whu.edu.cn, Li, Songzhan, School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430073, Feng, Yamin, and Ouyang, Yifang. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer. United States: N. p., 2014. Web. doi:10.1063/1.4893280.
Mo, Xiaoming, Long, Hao, Wang, Haoning, Chen, Zhao, Wan, Jiawei, Liu, Yuping, Fang, Guojia, E-mail: gjfang@whu.edu.cn, Li, Songzhan, School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430073, Feng, Yamin, & Ouyang, Yifang. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer. United States. doi:10.1063/1.4893280.
Mo, Xiaoming, Long, Hao, Wang, Haoning, Chen, Zhao, Wan, Jiawei, Liu, Yuping, Fang, Guojia, E-mail: gjfang@whu.edu.cn, Li, Songzhan, School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430073, Feng, Yamin, and Ouyang, Yifang. Mon . "Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer". United States. doi:10.1063/1.4893280.
@article{osti_22318024,
title = {Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO{sub 2} electron blocking layer},
author = {Mo, Xiaoming and Long, Hao and Wang, Haoning and Chen, Zhao and Wan, Jiawei and Liu, Yuping and Fang, Guojia, E-mail: gjfang@whu.edu.cn and Li, Songzhan and School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430073 and Feng, Yamin and Ouyang, Yifang},
abstractNote = {We demonstrated the capability of realizing enhanced ZnO-related UV emissions by using the low-cost and solution-processable ZnO quantum dots (QDs) with the help of a high-k HfO{sub 2} electron blocking layer (EBL) for the ZnO QDs/p-GaN light-emitting diodes (LEDs). Full-width at half maximum of the LED devices was greatly decreased from ∼110 to ∼54 nm, and recombinations related to nonradiative centers were significantly suppressed with inserting HfO{sub 2} EBL. The electroluminescence of the ZnO QDs/HfO{sub 2}/p-GaN LEDs demonstrated an interesting spectral narrowing effect with increasing HfO{sub 2} thickness. The Gaussian fitting revealed that the great enhancement of the Zn{sub i}-related emission at ∼414 nm whereas the deep suppression of the interfacial recombination at ∼477 nm should be the main reason for the spectral narrowing effect.},
doi = {10.1063/1.4893280},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = {Mon Aug 11 00:00:00 EDT 2014},
month = {Mon Aug 11 00:00:00 EDT 2014}
}