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Title: Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}

Abstract

A set of three-dimensional charge-density-wave (3D CDW) VSe{sub 2} nano-flakes with different thicknesses were obtained by the scotch tape-based micro-mechanical exfoliation method. Resistivity measurements showed that the 3D CDW transition temperature T{sub p} decreases systematically from 105 K in bulk to 81.8 K in the 11.6 nm thick flake. The Hall resistivity ρ{sub xy} of all the flakes showed a linear dependent behavior against the magnetic field with a residual electron concentration of the order of ∼10{sup 21} cm{sup −3} at 5 K. The electron concentration n increases slightly as the thickness d decreases, possibly due to the CDW gap is reduced with the decrease of the thickness.

Authors:
; ; ; ; ; ; ; ; ;  [1]; ;  [2]
  1. High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, Anhui (China)
  2. Institute of Solid State Physics, Chinese Academy of Sciences, Heifei 230031, Anhui (China)
Publication Date:
OSTI Identifier:
22318013
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHARGE DENSITY; MAGNETIC FIELDS; NANOSTRUCTURES; TRANSITION TEMPERATURE; VANADIUM SELENIDES

Citation Formats

Yang, Jiyong, Liu, Yan, Du, Haifeng, Ning, Wei, Zheng, Guolin, Jin, Chiming, Han, Yuyan, Wang, Ning, Tian, Mingliang, E-mail: tianml@hmfl.ac.cn, Zhang, Yuheng, Wang, Weike, and Yang, Zhaorong. Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}. United States: N. p., 2014. Web. doi:10.1063/1.4893027.
Yang, Jiyong, Liu, Yan, Du, Haifeng, Ning, Wei, Zheng, Guolin, Jin, Chiming, Han, Yuyan, Wang, Ning, Tian, Mingliang, E-mail: tianml@hmfl.ac.cn, Zhang, Yuheng, Wang, Weike, & Yang, Zhaorong. Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}. United States. doi:10.1063/1.4893027.
Yang, Jiyong, Liu, Yan, Du, Haifeng, Ning, Wei, Zheng, Guolin, Jin, Chiming, Han, Yuyan, Wang, Ning, Tian, Mingliang, E-mail: tianml@hmfl.ac.cn, Zhang, Yuheng, Wang, Weike, and Yang, Zhaorong. Mon . "Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}". United States. doi:10.1063/1.4893027.
@article{osti_22318013,
title = {Thickness dependence of the charge-density-wave transition temperature in VSe{sub 2}},
author = {Yang, Jiyong and Liu, Yan and Du, Haifeng and Ning, Wei and Zheng, Guolin and Jin, Chiming and Han, Yuyan and Wang, Ning and Tian, Mingliang, E-mail: tianml@hmfl.ac.cn and Zhang, Yuheng and Wang, Weike and Yang, Zhaorong},
abstractNote = {A set of three-dimensional charge-density-wave (3D CDW) VSe{sub 2} nano-flakes with different thicknesses were obtained by the scotch tape-based micro-mechanical exfoliation method. Resistivity measurements showed that the 3D CDW transition temperature T{sub p} decreases systematically from 105 K in bulk to 81.8 K in the 11.6 nm thick flake. The Hall resistivity ρ{sub xy} of all the flakes showed a linear dependent behavior against the magnetic field with a residual electron concentration of the order of ∼10{sup 21} cm{sup −3} at 5 K. The electron concentration n increases slightly as the thickness d decreases, possibly due to the CDW gap is reduced with the decrease of the thickness.},
doi = {10.1063/1.4893027},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = {Mon Aug 11 00:00:00 EDT 2014},
month = {Mon Aug 11 00:00:00 EDT 2014}
}