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Title: High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

Abstract

High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

Authors:
; ; ; ;  [1]
  1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)
Publication Date:
OSTI Identifier:
22318010
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; METALS; PERFORMANCE; SEMICONDUCTOR MATERIALS; YTTRIUM OXIDES

Citation Formats

Liang, Shibo, Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn, Si, Jia, Zhong, Donglai, and Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide. United States: N. p., 2014. Web. doi:10.1063/1.4892918.
Liang, Shibo, Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn, Si, Jia, Zhong, Donglai, & Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide. United States. doi:10.1063/1.4892918.
Liang, Shibo, Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn, Si, Jia, Zhong, Donglai, and Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn. Mon . "High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide". United States. doi:10.1063/1.4892918.
@article{osti_22318010,
title = {High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide},
author = {Liang, Shibo and Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn and Si, Jia and Zhong, Donglai and Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn},
abstractNote = {High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.},
doi = {10.1063/1.4892918},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = {Mon Aug 11 00:00:00 EDT 2014},
month = {Mon Aug 11 00:00:00 EDT 2014}
}