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Title: Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Abstract

In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al{sub 2}O{sub 3} layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO{sub 2}/SiO{sub 2} interface.

Authors:
; ; ;  [1]; ; ; ;  [2]; ;  [3]
  1. Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan (China)
  2. Central R and D Division, United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan (China)
  3. Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong, Kaohsiung 833, Taiwan (China)
Publication Date:
OSTI Identifier:
22317998
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACTIVATION ENERGY; ALUMINIUM IONS; ALUMINIUM OXIDES; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; METALS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TRAPS; TUNNEL EFFECT

Citation Formats

Kao, Tsung-Hsien, Chang, Shoou-Jinn, E-mail: changsj@mail.ncku.edu.tw, Fang, Yean-Kuen, Huang, Po-Chin, Lai, Chien-Ming, Hsu, Chia-Wei, Chen, Yi-Wen, Cheng, Osbert, Wu, Chung-Yi, and Wu, San-Lein. Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis. United States: N. p., 2014. Web. doi:10.1063/1.4893445.
Kao, Tsung-Hsien, Chang, Shoou-Jinn, E-mail: changsj@mail.ncku.edu.tw, Fang, Yean-Kuen, Huang, Po-Chin, Lai, Chien-Ming, Hsu, Chia-Wei, Chen, Yi-Wen, Cheng, Osbert, Wu, Chung-Yi, & Wu, San-Lein. Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis. United States. doi:10.1063/1.4893445.
Kao, Tsung-Hsien, Chang, Shoou-Jinn, E-mail: changsj@mail.ncku.edu.tw, Fang, Yean-Kuen, Huang, Po-Chin, Lai, Chien-Ming, Hsu, Chia-Wei, Chen, Yi-Wen, Cheng, Osbert, Wu, Chung-Yi, and Wu, San-Lein. 2014. "Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis". United States. doi:10.1063/1.4893445.
@article{osti_22317998,
title = {Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis},
author = {Kao, Tsung-Hsien and Chang, Shoou-Jinn, E-mail: changsj@mail.ncku.edu.tw and Fang, Yean-Kuen and Huang, Po-Chin and Lai, Chien-Ming and Hsu, Chia-Wei and Chen, Yi-Wen and Cheng, Osbert and Wu, Chung-Yi and Wu, San-Lein},
abstractNote = {In this study, the impact of aluminum ion implantation (Al I/I) on random telegraph noise (RTN) in high-k/metal gate (HK/MG) p-type metal-oxide-semiconductor field-effect-transistors (pMOSFETs) was investigated. The trap parameters of HK/MG pMOSFETs with Al I/I, such as trap energy level, capture time and emission time, activation energies for capture and emission, and trap location in the gate dielectric, were determined. The configuration coordinate diagram was also established. It was observed that the implanted Al could fill defects and form a thin Al{sub 2}O{sub 3} layer and thus increase the tunneling barrier height for holes. It was also observed that the trap position in the Al I/I samples was lower due to the Al I/I-induced dipole at the HfO{sub 2}/SiO{sub 2} interface.},
doi = {10.1063/1.4893445},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = 2014,
month = 8
}
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