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Title: Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

Abstract

High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.

Authors:
; ; ; ; ; ; ; ; ;  [1]; ; ;  [2];  [1];  [3]
  1. IMEC, Kapeldreef 75, 3001 Leuven (Belgium)
  2. Applied Materials, 3050 Bowers Avenue, Santa Clara, California 95054 (United States)
  3. (Belgium)
Publication Date:
OSTI Identifier:
22317994
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALKANES; AMMONIUM HYDROXIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTALS; DISLOCATIONS; ETCHING; GALLIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Guo, W., E-mail: guoweiming82@gmail.com, Pena, V., Merckling, C., Waldron, N., Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Eyben, P., Date, L., Bao, X., Sanchez, E., Vandervorst, W., and Katholieke Universiteit Leuven, Celestijnenlaan 200D, 3001 Leuven. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001). United States: N. p., 2014. Web. doi:10.1063/1.4892468.
Guo, W., E-mail: guoweiming82@gmail.com, Pena, V., Merckling, C., Waldron, N., Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Eyben, P., Date, L., Bao, X., Sanchez, E., Vandervorst, W., & Katholieke Universiteit Leuven, Celestijnenlaan 200D, 3001 Leuven. Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001). United States. doi:10.1063/1.4892468.
Guo, W., E-mail: guoweiming82@gmail.com, Pena, V., Merckling, C., Waldron, N., Collaert, N., Caymax, M., Vancoille, E., Barla, K., Thean, A., Eyben, P., Date, L., Bao, X., Sanchez, E., Vandervorst, W., and Katholieke Universiteit Leuven, Celestijnenlaan 200D, 3001 Leuven. Mon . "Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)". United States. doi:10.1063/1.4892468.
@article{osti_22317994,
title = {Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)},
author = {Guo, W., E-mail: guoweiming82@gmail.com and Pena, V. and Merckling, C. and Waldron, N. and Collaert, N. and Caymax, M. and Vancoille, E. and Barla, K. and Thean, A. and Eyben, P. and Date, L. and Bao, X. and Sanchez, E. and Vandervorst, W. and Katholieke Universiteit Leuven, Celestijnenlaan 200D, 3001 Leuven},
abstractNote = {High quality GaAs is selectively grown in 40 nm width Shallow Trench Isolation patterned structures. The patterned wafers have a V-shape Si (111) surface obtained by Tetramethylammonium hydroxide etching. By employing a SiCoNi™ pre-epi clean and two-step growth procedure (low temperature buffer and high temperature main layer), defects are effectively confined at the trench bottom, leaving a dislocation-free GaAs layer at the upper part. The high crystal quality is confirmed by transmission electron microscopy. Scanning spreading resistance microscopy indicates a high resistance of GaAs. The process conditions and GaAs material quality are highly compatible with Si technology platform.},
doi = {10.1063/1.4892468},
journal = {Applied Physics Letters},
number = 6,
volume = 105,
place = {United States},
year = {Mon Aug 11 00:00:00 EDT 2014},
month = {Mon Aug 11 00:00:00 EDT 2014}
}