skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric

Abstract

Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO{sub 2} thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO{sub 2} MOS capacitor grown at 1 s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO{sub 2} films have gate leakage current density of (5.18 × 10{sup −8} A/cm{sup 2}) as well as high dielectric break down fields of more than (∼10 MV/cm), which is better and comparable to that of thermally grown SiO{sub 2} at temperatures above 800 °C. These appealing electrical properties of ALD grown SiO{sub 2} thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates.

Authors:
; ; ; ;  [1]
  1. Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, Virginia 23504 (United States)
Publication Date:
OSTI Identifier:
22317974
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 33; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DIELECTRIC MATERIALS; LAYERS; LEAKAGE CURRENT; MOS TRANSISTORS; NANOSTRUCTURES; OZONE; SILANES; SILICON OXIDES; THIN FILMS; X RADIATION

Citation Formats

Pradhan, Sangram K., Tanyi, Ekembu K., Skuza, Jonathan R., Xiao, Bo, and Pradhan, Aswini K., E-mail: apradhan@nsu.edu. Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric. United States: N. p., 2015. Web. doi:10.1116/1.4895107.
Pradhan, Sangram K., Tanyi, Ekembu K., Skuza, Jonathan R., Xiao, Bo, & Pradhan, Aswini K., E-mail: apradhan@nsu.edu. Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric. United States. doi:10.1116/1.4895107.
Pradhan, Sangram K., Tanyi, Ekembu K., Skuza, Jonathan R., Xiao, Bo, and Pradhan, Aswini K., E-mail: apradhan@nsu.edu. Thu . "Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric". United States. doi:10.1116/1.4895107.
@article{osti_22317974,
title = {Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric},
author = {Pradhan, Sangram K. and Tanyi, Ekembu K. and Skuza, Jonathan R. and Xiao, Bo and Pradhan, Aswini K., E-mail: apradhan@nsu.edu},
abstractNote = {Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO{sub 2} thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO{sub 2} MOS capacitor grown at 1 s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO{sub 2} films have gate leakage current density of (5.18 × 10{sup −8} A/cm{sup 2}) as well as high dielectric break down fields of more than (∼10 MV/cm), which is better and comparable to that of thermally grown SiO{sub 2} at temperatures above 800 °C. These appealing electrical properties of ALD grown SiO{sub 2} thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates.},
doi = {10.1116/1.4895107},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 1,
volume = 33,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}