Two-dimensional electron and hole gases in In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN heterostructure for enhancement mode operation

Journal Article · Thu Aug 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4891732· OSTI ID:22314708

Yan, Junda; Wang, Quan; Qu, Shenqi; Xiao, Hongling; Peng, Enchao; Kang, He; Wang, Cuimei; Feng, Chun; Yin, Haibo; Jiang, Lijuan ^[1]; Wang, Xiaoliang ^[1]; Li, Baiquan ^[2]; Wang, Zhanguo ^[3]; Hou, Xun ^[4]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
2. Beijing Huajin Chuangwei Technology Co., Ltd., Beijing (China)
3. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing (China)
4. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, P.O. Box 912, Beijing 100083 (China)

In this paper, a numerical study of In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN heterostructure is presented. The dependence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) sheet densities on variables, such as In{sub x}Ga{sub 1−x}N layer thickness and In content, and Al{sub y}Ga{sub 1−y}N barrier layer thickness and Al content, are systematically investigated. The effect of P-type doping in In{sub x}Ga{sub 1−x}N on 2DEG and 2DHG sheet densities in this heterostructure is also studied. It is shown that the strong reverse electric field in In{sub x}Ga{sub 1−x}N cap layer contributes to the depletion of 2DEG at the Al{sub y}Ga{sub 1-y}N/GaN interface. When In{sub x}Ga{sub 1−x}N layer thickness and In content increases, 2DEG sheet density decreases significantly. P-type doping shows less influence on 2DEG compared to the polarization electric field in In{sub x}Ga{sub 1−x}N layer. In addition, there exist critical values for all the variables beyond which 2DHG appears at the interface of In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N. Once 2DHG appears, it will prevent 2DEG from being further depleted. With proper design of Al{sub y}Ga{sub 1−y}N layer, the coexistence of 2DEG and 2DHG in In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN structure can be avoided, showing that this structure has great potential in the fabrication of enhancement mode (E-mode) high electron mobility transistors.

• OSTI ID: 22314708
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPARATIVE EVALUATIONS
DENSITY
DEPLETION LAYER
ELECTRIC FIELDS
ELECTRON GAS
ELECTRON MOBILITY
ELECTRONS
FABRICATION
GALLIUM NITRIDES
HOLES
NUMERICAL ANALYSIS
POLARIZATION
THICKNESS
TWO-DIMENSIONAL CALCULATIONS
YTTRIUM NITRIDES