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Title: Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

Abstract

Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

Authors:
 [1];  [2];  [3]
  1. Graduate School of System Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)
  2. (Japan)
  3. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197 (Japan)
Publication Date:
OSTI Identifier:
22314677
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ATOMS; CARRIER MOBILITY; COMPARATIVE EVALUATIONS; CRYSTALS; DENSITY FUNCTIONAL METHOD; DIFFUSION BARRIERS; ELECTRONIC EQUIPMENT; IMPURITIES; STABILITY; SUBSTRATES; TRANSITION ELEMENTS

Citation Formats

Maeta, Takahiro, GlobalWafers Japan Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197, and Sueoka, Koji. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals. United States: N. p., 2014. Web. doi:10.1063/1.4893362.
Maeta, Takahiro, GlobalWafers Japan Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197, & Sueoka, Koji. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals. United States. doi:10.1063/1.4893362.
Maeta, Takahiro, GlobalWafers Japan Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197, and Sueoka, Koji. Thu . "Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals". United States. doi:10.1063/1.4893362.
@article{osti_22314677,
title = {Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals},
author = {Maeta, Takahiro and GlobalWafers Japan Co., Ltd., Higashikou, Seirou-machi, Kitakanbara-gun, Niigata 957-0197 and Sueoka, Koji},
abstractNote = {Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.},
doi = {10.1063/1.4893362},
journal = {Journal of Applied Physics},
number = 7,
volume = 116,
place = {United States},
year = {Thu Aug 21 00:00:00 EDT 2014},
month = {Thu Aug 21 00:00:00 EDT 2014}
}