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Title: Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

Abstract

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

Authors:
; ; ;  [1];  [1];  [2];  [3];  [4]
  1. Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen's University Belfast, University Road, Belfast BT7 1NN (United Kingdom)
  2. (United Kingdom)
  3. Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden)
  4. Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)
Publication Date:
OSTI Identifier:
22314642
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITORS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONIC EQUIPMENT; FERROELECTRIC MATERIALS; GEOMETRY; HOLES; HOT SPOTS; ION BEAMS; LAMELLAE; MICROSCOPY; MILLING; MONOCRYSTALS; NUCLEATION

Citation Formats

Whyte, J. R., McQuaid, R. G. P., Einsle, J. F., Gregg, J. M., E-mail: m.gregg@qub.ac.uk, Ashcroft, C. M., Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, Canalias, C., and Gruverman, A. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”. United States: N. p., 2014. Web. doi:10.1063/1.4891347.
Whyte, J. R., McQuaid, R. G. P., Einsle, J. F., Gregg, J. M., E-mail: m.gregg@qub.ac.uk, Ashcroft, C. M., Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, Canalias, C., & Gruverman, A. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”. United States. doi:10.1063/1.4891347.
Whyte, J. R., McQuaid, R. G. P., Einsle, J. F., Gregg, J. M., E-mail: m.gregg@qub.ac.uk, Ashcroft, C. M., Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, Canalias, C., and Gruverman, A. Thu . "Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”". United States. doi:10.1063/1.4891347.
@article{osti_22314642,
title = {Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”},
author = {Whyte, J. R. and McQuaid, R. G. P. and Einsle, J. F. and Gregg, J. M., E-mail: m.gregg@qub.ac.uk and Ashcroft, C. M. and Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE and Canalias, C. and Gruverman, A.},
abstractNote = {Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.},
doi = {10.1063/1.4891347},
journal = {Journal of Applied Physics},
number = 6,
volume = 116,
place = {United States},
year = {Thu Aug 14 00:00:00 EDT 2014},
month = {Thu Aug 14 00:00:00 EDT 2014}
}