Electronic and magnetic properties of armchair MoS{sub 2} nanoribbons under both external strain and electric field, studied by first principles calculations
- Group of Computational Condensed Matter Physics, National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)
- Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
- Institute for Materials Research, Tohoku University, 2-1-1 Katahira Aoba-ku, Sendai 980-8577 (Japan)
The electronic and magnetic properties of armchair edge MoS{sub 2} nanoribbons (MoS{sub 2}-ANRs) underboth the external strain and transverse electric field (E{sub t}) have been systematically investigated by using the first-principles calculations. It is found that: (1) If no electric field is applied, an interesting structural phase transition would appear under a large tensile strain, leading to a new phase MoS{sub 2}-A'NR, and inducing a big jump peak of the band gap in the transition region. But, the band gap response to compressive strains is much different from that to tensile strain, showing no the structural phase transition. (2) Under the small tensile strains (<10%), the combined E{sub t} and tensile strain give rise to a positive superposition (resonant) effect on the band gap reduction at low E{sub t} (<3 V/nm), and oppositely a negative superposition (antiresonant) one at high E{sub t} (>4 V/nm). On the other hand, the external compressive strains have always presented the resonant effect on the band gap reduction, induced by the electric field. (3) After the structural phase transition, an external large tensile strain could greatly reduce the critical field E{sub tc} causing the band gap closure, and make the system become a ferromagnetic (FM) metal at a relative low E{sub t} (e.g., <4 V/nm), which is very helpful for its promising applications in nano-mechanical spintronics devices. (4) At high E{sub t} (>10 V/nm), the magnetic moments of both the MoS{sub 2}-ANR and MoS{sub 2}-A'NR in their FM states could be enhanced greatly by a tensile strain. Our numerical results of effectively tuning physical properties of MoS{sub 2}-ANRs by combined external strain and electric field may open their new potential applications in nanoelectronics and spintronics.
- OSTI ID:
- 22314616
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 6; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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