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Title: Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

Abstract

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

Authors:
; ; ;  [1]
  1. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22314519
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACETONITRILE; GALLIUM COMPOUNDS; GLYCOLS; INDIUM COMPOUNDS; NITRIC ACID; PASSIVATION; SOLVENTS; THIN FILMS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM OXIDES; ZINC OXIDES

Citation Formats

An, Sungjin, Mativenga, Mallory, Kim, Youngoo, and Jang, Jin, E-mail: jjang@khu.ac.kr. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation. United States: N. p., 2014. Web. doi:10.1063/1.4892541.
An, Sungjin, Mativenga, Mallory, Kim, Youngoo, & Jang, Jin, E-mail: jjang@khu.ac.kr. Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation. United States. doi:10.1063/1.4892541.
An, Sungjin, Mativenga, Mallory, Kim, Youngoo, and Jang, Jin, E-mail: jjang@khu.ac.kr. Mon . "Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation". United States. doi:10.1063/1.4892541.
@article{osti_22314519,
title = {Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation},
author = {An, Sungjin and Mativenga, Mallory and Kim, Youngoo and Jang, Jin, E-mail: jjang@khu.ac.kr},
abstractNote = {We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.},
doi = {10.1063/1.4892541},
journal = {Applied Physics Letters},
number = 5,
volume = 105,
place = {United States},
year = {Mon Aug 04 00:00:00 EDT 2014},
month = {Mon Aug 04 00:00:00 EDT 2014}
}