Charging dynamics of a floating gate transistor with site-controlled quantum dots

Journal Article · Mon Aug 04 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4892355· OSTI ID:22314518

Hartmann, F.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Worschech, L. ^[1]

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1. Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of μs, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

• OSTI ID: 22314518
• Journal Information: Applied Physics Letters, Vol. 105, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ETCHING
GALLIUM ARSENIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
QUANTUM WIRES
TRANSISTORS