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Title: Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

Abstract

We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer.

Authors:
 [1]
  1. National Center for Nanoprocess and Equipment, Korea Institute of Industrial Technology, Gwangju 500-480 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22314515
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; AMORPHOUS STATE; CARBON NITRIDES; CHEMICAL VAPOR DEPOSITION; LAYERS; NANOSTRUCTURES; SILICON NITRIDES; WATER VAPOR; X-RAY DIFFRACTION

Citation Formats

Choi, Bum Ho, E-mail: bhchoi@kitech.re.kr, and Lee, Jong Ho. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures. United States: N. p., 2014. Web. doi:10.1063/1.4892354.
Choi, Bum Ho, E-mail: bhchoi@kitech.re.kr, & Lee, Jong Ho. Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures. United States. doi:10.1063/1.4892354.
Choi, Bum Ho, E-mail: bhchoi@kitech.re.kr, and Lee, Jong Ho. Mon . "Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures". United States. doi:10.1063/1.4892354.
@article{osti_22314515,
title = {Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures},
author = {Choi, Bum Ho, E-mail: bhchoi@kitech.re.kr and Lee, Jong Ho},
abstractNote = {We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are free from intermixed interface defects effectively block water vapor permeation into active layer.},
doi = {10.1063/1.4892354},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 105,
place = {United States},
year = {2014},
month = {8}
}