Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China)
- IQE, Inc., Bethlehem, Pennsylvania 18015 (United States)
- Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)
Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9 × 10{sup 12} cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.
- OSTI ID:
- 22314486
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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